Strain Relief at Metal Interfaces with Square Symmetry

Müller, Bert; Fischer, Björn; Nedelmann, Lorenz; Fricke, Alexander; Kern, Klaus

doi:10.1103/physrevlett.76.2358

Cited by 59 publications

(47 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The good agreement between the experimental data and the equilibrium simulation study leads us to conclude that the observed configurations of the film at different thicknesses correspond to the equilibrium state with thermally generated misfit dislocations as the strain relief mechanism. The microscopic nature of the misfit dislocation observed here for the Pd=Cu100 system is rather complicated and does not fit into the simple model postulated previously [13].…”

mentioning

confidence: 83%

Strain Relief in Cu-Pd Heteroepitaxy

Przybylski

Trushin

et al. 2005

Phys. Rev. Lett.

View full text Add to dashboard Cite

We present experimental and theoretical studies of Pd/Cu(100) and Cu/Pd(100) heterostructures in order to explore their structure and misfit strain relaxation. Ultrathin Pd and Cu films are grown by pulsed laser deposition at room temperature. For Pd/Cu, compressive strain is released by networks of misfit dislocations running in the [100] and [010] directions, which appear after a few monolayers already. In striking contrast, for Cu/Pd the tensile overlayer remains coherent up to about 9 ML, after which multilayer growth occurs. The strong asymmetry between tensile and compressive cases is in contradiction with continuum elasticity theory, and is also evident in the structural parameters of the strained films. Molecular Dynamics calculations based on classical many-body potentials confirm the pronounced tensile-compressive asymmetry and are in good agreement with the experimental data.Comment: 4 pages, 5 figures, to appear in Phys. Rev. Let

show abstract

mentioning

confidence: 83%

Strain Relief in Cu-Pd Heteroepitaxy

Przybylski

Trushin

et al. 2005

Phys. Rev. Lett.

View full text Add to dashboard Cite

show abstract

“…The upper part shows the data of more than 3000 islands, each dot corresponding to one island (the grey shaded area is the forbidden region for the ratios; its upper limit corresponds to that of linear atomic chains, the lower limit to circular islands). relaxation via "internal faceting" which has been observed for larger Cu islands [17].…”

Section: Fig 3(color) Island Perimeter P Vs Island Sizementioning

confidence: 99%

“…The observation of a constant arm width also implies that growth becomes anisotropic and atoms attaching sideways diffuse towards the tip. The optimum arm width of ϳ22 atoms is reasonable since it is well below the critical island size for the onset of strain relaxation via internal ͕111͖ faceting [17,18].…”

Section: Fig 3(color) Island Perimeter P Vs Island Sizementioning

confidence: 99%

Island Shape Transition in Heteroepitaxial Metal Growth on Square Lattices

et al. 1998

Self Cite

View full text Add to dashboard Cite

A novel mechanism for ramified island growth in the initial stages of metal heteroepitaxy is reported. Scanning tunneling microscopy measurements reveal that copper islands on Ni(100), as they grow in size, undergo a shape transition. Below a critical size of ഠ480 atoms, compact islands form, while above this size they develop a ramified shape. This effect is not of kinetic origin and has been observed in an extended range of growth temperature (250 -370 K) and deposition flux ͑1025 10 22 monolayer͞s͒. The shape transition is ascribed to the island size dependent strain relaxation. [S0031-9007(98)

show abstract

“…Müller et al reported the appearance of linear stripes during the growth of Cu on Ni͑100͒. 29 The proposed model involved again stacking fault regions in ͑111͒ planes, therefore inclined with respect to the ͑100͒ surface. The bright lines observed in our STM images could result from a similar type of surface reconstruction induced by lattice misfit accommodation or simply surface strain relief.…”

Section: B Al On Ag"100…mentioning

confidence: 99%

Influence of strain in Ag on Al(111) and Al on Ag(100) thin film growth

et al. 2003

View full text Add to dashboard Cite

We demonstrate the influence of interfacial strain on the growth modes of Ag films on Al(111), despite the small magnitude of the lattice misfit in this system. The strain is relieved by the formation of stacking fault domains bounded by Shockley partial dislocations. The growth mode and the step roughness appear to be strongly connected. Growth is three-dimensional (3D) as long as the steps are straight, but switches to 2D at higher coverage when the steps become rough. Anisotropic strain relaxation and straight steps seem to be related. We also report related observations for Al deposited on Ag(100). Keywords Ames Laboratory Disciplines Physical Chemistry CommentsThis article is from Physical Review B 67, no. 15 (2003) We demonstrate the influence of interfacial strain on the growth modes of Ag films on Al͑111͒, despite the small magnitude of the lattice misfit in this system. The strain is relieved by the formation of stacking fault domains bounded by Shockley partial dislocations. The growth mode and the step roughness appear to be strongly connected. Growth is three-dimensional ͑3D͒ as long as the steps are straight, but switches to 2D at higher coverage when the steps become rough. Anisotropic strain relaxation and straight steps seem to be related. We also report related observations for Al deposited on Ag͑100͒.

show abstract

Strain Relief at Metal Interfaces with Square Symmetry

Cited by 59 publications

References 17 publications

Strain Relief in Cu-Pd Heteroepitaxy

Strain Relief in Cu-Pd Heteroepitaxy

Island Shape Transition in Heteroepitaxial Metal Growth on Square Lattices

Influence of strain in Ag on Al(111) and Al on Ag(100) thin film growth

Contact Info

Product

Resources

About