2013
DOI: 10.1103/physrevb.88.115433
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Strain stabilization and thickness dependence of magnetism in epitaxial transition metal monosilicide thin films on Si(111)

Abstract: We present a comprehensive study of different 3d transition metal monosilicides in their ground state crystal structure (B20), ranging from equilibrium bulk over biaxially strained bulk to epitaxial thin films on Si(111), by means of density functional theory. The magnetic properties of MnSi and FeSi films are found to be considerably modified due to the epitaxial strain induced by the substrate. In MnSi bulk material, which can be seen as a limit of thick films, we find a strain-induced volume expansion, an i… Show more

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Cited by 18 publications
(32 citation statements)
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References 64 publications
(109 reference statements)
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“…The 3rd QW state shows contributions from all nickelate layers, but strongest from the central one. The inset displays the local density of states [53][54][55] Comparison of the nickelate region to DFT and x-ray diffraction (XRD) results for 100-200 Å thick LNO films grown on LAO and STO substrates 40 reveals major similarities, e.g., the strong variation of the apical bond angles with a ( Fig. 1).…”
Section: Interplay Of Structure and Orbital Polarizationmentioning
confidence: 99%
“…The 3rd QW state shows contributions from all nickelate layers, but strongest from the central one. The inset displays the local density of states [53][54][55] Comparison of the nickelate region to DFT and x-ray diffraction (XRD) results for 100-200 Å thick LNO films grown on LAO and STO substrates 40 reveals major similarities, e.g., the strong variation of the apical bond angles with a ( Fig. 1).…”
Section: Interplay Of Structure and Orbital Polarizationmentioning
confidence: 99%
“…25 In a simple Heisenberg picture one would expect an increase in T c only for a decreasing Mn-Mn bond distance, which we can clearly rule out. 37 However, as the Si atoms move in films with an increased T c , another coupling mechanism, involving Si, may be present as well. For example, the change of the positions of the Si atoms could change the crystal field affecting the magnetic ions.…”
Section: Dzyaloshinskii-moriya Interactions Remains Unchangedmentioning
confidence: 99%
“…[3][4][5][6][7] As an alternative one could use a light sp metal such as Al as a contact layer between Si and the ferromagnet. Ohmic contacts between Si and Al are well-studied and form a standard component in Si device technology.…”
Section: Introductionmentioning
confidence: 99%