Strain stiffening, high load-invariant hardness, and electronic anomalies of boron phosphide under pressure

Ultra-Hard (41 GPa) Isotopic Pure 10BP Semiconductor Microwires for Flexible Photodetection and Pressure Sensing

“…Besides, the binding energy of P 2p 3/2 , P 2p 1/2 , and B 1s is 129.96, 130.83, and 187.84 eV, respectively, which is basically the same as that reported for nat BP in the literature. 4 This phenomenon illustrates that the covalent bonding state is a common existence in 10 BP and nat BP, which explains the origins of their excellent mechanical properties. Figure 2b is a high-angle circular dark field image (HAADF) of the 10 BP micro/ nanowire, on the basis of which a component analysis was performed on the selected area of this sample.…”

“…3,14−17 In addition, the existence of covalent bonding in BP also brings it excellent mechanical properties. 4 Most research conducted currently focuses on the natural abundance of the boron ( nat B) element, which consists of 19.9% 10 B and 80.1% 11 B. 18,19 Differences in the mass of the isotope nucleus can cause certain differences in physical and chemical properties between elements.…”

“…Cubic boron phosphide (BP) is a promising candidate material for the advanced electronic devices working in extreme environments due to its excellent properties, such as high temperature stability, high mechanical hardness, high thermal conductivity, high mobility, and chemical inertness. − For example, the high thermal neutron capture cross section endows it with a broad application prospect in thermal neutron counters and neutron detectors. Besides, the ultralow hole effective mass and high hole mobility make it possible to be a highly efficient non-oxide p-type transparent conductive layer .…”

Invariant expansion of the 30-band k.p model and its parameters for III-V compounds

“…The electronic band structures for BX compounds were calculated by DFT methods and reported in many articles [74][75][76][77][78], but experimental studies of the band gap for cubic BX are limited to a few cases [79][80][81][82][83][84][85], mostly for BAs. The interest in BAs increased suddenly in 2013 when DFT calculations predicted BAs as a highly thermal conductive material with a thermal conductivity comparable with that of diamond [86,87].…”

Super-hard “Tanghulu”: cubic BP microwire covered with amorphous SiO2 balls

“…What's more, BP has good mechanical properties. For example, its Vickers hardness can reach 38 GPa [15], which is higher than that of the third-generation semiconductor SiC(22 GPa) [16]; its elastic modulus is as high as 362 GPa; its shear modulus is 157 GPa [17], which is the highest among all binary covalent compounds with sphalerite structure. Besides, BP also has a high thermal conductivity that can reach 460 W/mK 19 according to a latest research.…”