Strain Technology under Metal/High-k Damascene-Gate Stacks

Abstract

Strain technology under metal/high-k damascene-gate stacks is discussed. It is estimated from stress simulation that compressive stresses for pMOSFETs with compressive stress-liners of SiN film and eSiGe are enhanced by damascene-gate process. Moreover, it is confirmed by UV-Raman spectroscopy in plane view that the compressive stress is considerably enhanced just after dummy-gate removal step, especially for smaller gate length. On the other hand for nMOSFETs, tensile stresses even by top-cut tensile stress-liners of SiN film are slightly enhanced by damascene-gate process. Therefore, high drivability of highperformance CMOS devices with gate length of 40 nm are achieved by not only thinner T inv of 1.4 nm but also higher transconductance.

Lithium intercalation edge effects and doping implications for graphite anodes

“…The principle has been demonstrated through the energy spectrum and dispersion in a magnetic field of zigzag nanoribbons. 70 Through careful study of the Pauli paramagnetic susceptibility, this approach could likewise be applied as a means to characterise the zigzag/armchair ratio in graphite particles with controlled basal to edge plane surface areas. 71,72 ARTICLE Journal Name 2012, 00, 1-3 This journal is © The Royal Society of Chemistry 20xx…”

Lithium Intercalation Edge Effects and Doping Implications for Graphite Anodes

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