Abstract:Strain engineering has been widely used in the study of two‐dimensional semiconductors in recent years, because it can improve catalytic performance by changing the structural characteristics of materials. In this work, we systematically investigate the effects of biaxial strain on the electronic structure, band‐edge positions, and optical absorption of perfect Janus In2S2X (X=Se, Te) particles and vacancy In2S2X (V‐In2S2X). Biaxial strain enables In2S2X to achieve a transition between indirect and direct band… Show more
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