Strained InGaAs-GaAs single-quantum-well lasers coupled to n-type δ-doping-improved static and dynamic performance

2010

In this work we demonstrated increased hole confinement in a bilayer quantum well that consists of two thin layers of GaInAsN/GaAsSbN confined by GaAs barriers. Comparison between the temperature dependence of photoluminescence intensity of the bilayer and GaInAsN quantum wells indicated that electrons rather than holes are the less confined carriers in the bilayer structure. This structure enables independent control of the band gap energy, band offsets and reduces the temperature sensitivity of laser performance. The calculations showed that a bilayer based short-period superlattice would provide a high optical gain at 1.3-1.55 m due to increased electron-hole wave functions overlap.

Section: Bilayer Based Spslmentioning

confidence: 99%

Improved hole confinement in GaInAsN–GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers

Albo

Bahir

2010

“…7 In the same manner, when the electron ground-state energies of the two QWs coincide, the electrons can tunnel from the first to the second QW. This enables electrons to tunnel from the ␦ doping into the first QW ͑resonance tunneling͒.…”

Section: ␦-Doped Double Qwsmentioning

confidence: 98%

“…7 The insensitivity to the QW width may also hint that the e-e scattering plays a roll in the injection of electrons to the first QW. 5.…”

Section: Introductionmentioning

confidence: 99%

Resonant control of the characteristic temperatures T0 and T1 of AlInGaAs 0.8μm semiconductor lasers with delta-doped tunneling quantum wells

2007

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Articles you may be interested in 2.7μm InAs quantum well lasers on InP-based InAlAs metamorphic buffer layers Experimental evidence on quantum well-quantum dash energy transfer in tunnel injection structures for 1.55 μ m emission Appl. Phys. Lett. 90, 081915 (2007); 10.1063/1.2472543 On the tunnel injection of excitons and free carriers from In 0.53 Ga 0.47 As ∕ In 0.53 Ga 0.23 Al 0.24 As quantum well to In As ∕ In 0.53 Ga 0.23 Al 0.24 As quantum dashes Appl. Phys. Lett. 89, 061902 (2006); 10.1063/1.2243889Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate Appl.

“…6 This improvement stems from the strong coupling between the two active layer elements, viz., the strained In x Ga 1−x As single QW and the Te n-type ␦-DR, which results in a higher initial carrier population in the QW and in an additional cold-carrier injection path into the diode laser active region ͑deep states at the ␦-DR͒. Electrons are readily equilibrated in the highly populated ␦-DR due to electron-electron ͑e-e͒ scattering, 7 and injection schemes into the QW active region can be enhanced, either by e-e scattering or by tunneling.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of the coupling between n-type δ-doping region and quantum dot assemblies

Dery

Rudra

et al. 2006

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We present experimental evidence that at room temperature the main coupling mechanism between an n-type δ-doping region and an adjacent plane of dots is energy-conserving electron-electron scattering, in which a hot electron in the δ-doping region transfers energy to a deeply confined electron in that region and relaxes to the quantum dot. We demonstrate that at room temperature the increased capture cross section due to electron-electron scattering considerably enhances the injection into the quantum dots with a certain size and thus reduces the phonon bottleneck in quantum dot assemblies for the quantum dots that interact with the δ-doping region. We identify different temperature-dependent injection schemes by comparing the photoluminescence of dilute and dense assemblies with the corresponding photoluminescence of similar structures including n-type δ-doping regions adjacent to the dots’ plane.