Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers

Morkoç̌, H.; Sverdlov, B.; Gao, Guangjun

doi:10.1109/5.219338

Cited by 75 publications

(18 citation statements)

References 129 publications

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“…One of the main mechanisms to fabricate these nanometer-sized structures is the Stranski–Krastanov growth mode of epitaxial lattice mismatch materials [1–3]. This method has the disadvantage that the obtained quantum dots are inherently strained, which modifies optical and electrical properties of the material [4]. In the last decade, several strategies have been developed to overcome this restriction and to obtain strain-free quantum dot structures [5–15].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures

et al. 2017

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We use a combined process of Ga-assisted deoxidation and local droplet etching to fabricate unstrained mesoscopic GaAs/AlGaAs structures exhibiting a high shape anisotropy with a length up to 1.2 μm and a width of 150 nm. We demonstrate good controllability over size and morphology of the mesoscopic structures by tuning the growth parameters. Our growth method yields structures, which are coupled to a surrounding quantum well and present unique optical emission features. Microscopic and optical analysis of single structures allows us to demonstrate that single structure emission originates from two different confinement regions, which are spectrally separated and show sharp excitonic lines. Photoluminescence is detected up to room temperature making the structures the ideal candidates for strain-free light emitting/detecting devices.

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Section: Introductionmentioning

confidence: 99%

Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures

et al. 2017

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“…A 15 Å thick wetting layer of nominal concentration was inserted between the islands and the substrate, following Ref. [ 34 ]. The island profiles used in this simulation were extracted from the AFM measurements in uncapped islands (Figure 6 ) that resulted in the dimensions from Table 1 .…”

Section: Experimental Confirmation Of the Purposed Theorymentioning

confidence: 99%

Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots

et al. 2010

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A method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the valence-band anisotropic effective masses and strain effects must be used to describe the behavior of the photoluminescence emission, proposed as a clean tool for the characterization of dot anisotropy and/or inter-dot coupling. Under special growth conditions, such as substrate temperature and Arsenic background, 1D chains of In0.4Ga0.6 As quantum dots were grown by molecular beam epitaxy. Grazing-incidence X-ray diffraction measurements directly evidence the strong strain anisotropy due to the formation of quantum dot chains, probed by polarization-resolved low-temperature photoluminescence. The results are in fair good agreement with the proposed model.

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“…[20][21][22] Lots of works have illustrated the importance of the misfit strain on the physical properties for the van der Waals heterostructure. [23][24][25][26] However, the effect of the misfit strain on the nanomechanical resonator based on the van der Waals heterostructure is still unclear, which will be discussed in the present work.…”

Section: Introductionmentioning

confidence: 98%

Misfit strain-induced energy dissipation for graphene/MoS₂ heterostructure nanomechanical resonators

Jiang

2019

Nanotechnology

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Misfit strain is inevitable in various heterostructures like the graphene/MoS 2 van der Waals heterostructure. Although the misfit strain effect on electronic and other physical properties have been well studied, it is still unclear how will the misfit strain affect the performance of the nanomechanical resonator based on the graphene/MoS 2 heterostructure. By performing molecular dynamics simulations, we disclose a misfit strain-induced decoupling phenomenon between the graphene layer and the MoS 2 layer during the resonant oscillation of the heterostructure. A direct relationship between the misfit strain and the decoupling mechanism is successfully established through the retraction force analysis. We further suggest to use the graphene/MoS 2 /graphene sandwich heterostructure for the nanomechanical resonator application, which is able to prevent the misfit strain-related decoupling phenomenon. These results provide valuable information for the future application of the graphene/MoS 2 heterostructure in the nanomechanical resonator field. PACS numbers: 78.20.Bh,

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Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers

Cited by 75 publications

References 129 publications

Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures

Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures

Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots

Misfit strain-induced energy dissipation for graphene/MoS₂ heterostructure nanomechanical resonators

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Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers

Cited by 75 publications

References 129 publications

Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures

Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures

Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots

Misfit strain-induced energy dissipation for graphene/MoS2 heterostructure nanomechanical resonators

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Misfit strain-induced energy dissipation for graphene/MoS₂ heterostructure nanomechanical resonators