Strained-Silicon Heterojunction Bipolar Transistor

Persson, Stefan; Fjer, M.; Escobedo-Cousin, Enrique; Olsen, SH; Malm, B. Gunnar; Wang, Yongbin; Hellström, Per‐Erik; Östling, Mikael; O'Neill, AG

doi:10.1109/ted.2010.2045667

Cited by 16 publications

(6 citation statements)

References 29 publications

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“…Silicon-based strain technology can effectively improve the mobility of carriers, thus improving the performance of devices, and has become an important mature technology and development direction of high-frequency/highperformance semiconductor devices and ICs [8]. Strain effect now has been introduced into SiGe HBT to improve device performance [9][10][11][12]. STMicroelectronics uses stacked metal interconnect wire structure near HBT based on BiCMOS-9W process [9].…”

Section: Introductionmentioning

confidence: 99%

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Effect of uniaxial strain on characteristic frequency of scaled SiGe HBT with embedded stress raiser

et al. 2022

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In order to further improve the performance of scaled silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and consider the compatibility with mature CMOS process, a novel SiGe HBT is designed by introducing the embedded Si1−yGey stress raiser into the collector. In the proposed HBT structure, the collector region is subjected to additional uniaxial stress, to enhance the characteristic frequency. The effect of embedded Si1−yGey stress raiser on the frequency performance with different Ge mole fractions is simulated and analyzed by employing SILVACO TCAD tools. The simulation results show that the high frequency performance of the device can be significantly improved by applying additional uniaxial stress in the collector. At y = 0.3, the current gain of the device is increased by approximately 6% compared to the case where no stress is applied to the collector region (y = 0). Taking the uniform SiGe base case with the Ge fraction of 0.25 as an example, by adjusting the Ge fraction of the stress raiser, the peak values of f T and f max reach about 507.7 GHz and 730.7 GHz, respectively. Compared with the traditional SiGe HBT without any additional stress in the collector region, f T and f max are respectively increased by 29.1% and 71.5%. When y = 0.1, the proposed device has the best frequency characteristics due to the peak value of the f T×f max product.

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Section: Introductionmentioning

confidence: 99%

“…Ref. [10] proposed a new strain Si HBT device structure that uses a relaxed SiGe virtual substrate as the collector region and grows biaxial strain Si (SSi) on it as the emitter region. Compared with the traditional SiGe HBT, the current gain is increased by 11%.…”

Section: Introductionmentioning

confidence: 99%

Effect of uniaxial strain on characteristic frequency of scaled SiGe HBT with embedded stress raiser

et al. 2022

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“…To combat all of these fabrication issues, using the charge plasma concept of the bipolar charge plasma transistor (BCPT) is explored. It shows a high current gain (β) and cutoff frequency (f T ), and therefore seems to be a viable option for analog applications [11][12][13][14] . The charge plasma p-n junction [10] has already been fabricated, and the above device shows compatibility with the BiCMOS process, thus making it suitable for fabrication.…”

Section: Introductionmentioning

confidence: 99%

Impact of strained silicon on the device performance of a bipolar charge plasma transistor

Singh¹

2018

J. Semicond.

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In this manuscript we analyze a unique approach to improve the performance of the bipolar charge plasma transistor (BCPT) by introducing a strained Si/SixGe1−x layer as the active device region. For charge plasma realization different metal work-function electrodes are used to induce n+ and p+ regions on undoped strained silicon-on-insulator (sSOI or SixGe1−x) to realize emitter, base, and collector regions of the BCPT. Here, by using a calibrated 2-D TCAD simulation the impact of a Si mole fraction x (in SixGe1−x) on device performance metrics is investigated. The analysis demonstrates the band gap lowering with decreasing Si content or effective strain on the Si layer, and its subsequent advantages. This work reports a significant improvement in current gain, cutoff frequency, and lower collector breakdown voltage (BVCEO) for the proposed structure over the conventional device. The effect of varying temperature on the strained Si layer and its implications on the device performance is also investigated. The analysis demonstrates a fair device-level understanding and exhibits the immense potential of the SixGe1−x material as the device layer. In addition to this, using extensive 2-D mixed-mode TCAD simulation, a considerable improvement in switching transient times are also observed compared to its conventional counterpart.

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“…However, if the strain in the SiGe base is somehow reduced for a given Ge composition then higher Ge concentrations become viable. This concept is explored by fabricating strained Si (εSi) HBTs on a strain-relaxed SiGe buffer [3].…”

Section: Introductionmentioning

confidence: 99%

(Invited) Strained Silicon Heterojunction Bipolar Transistors

O'Neill

2013

ECS Trans.

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Strained Si HBTs have been demonstrated with a maximum current gain of 3700 using a relaxed Si0.85Ge0.15 virtual substrate, Si0.7Ge0.3 base and strained Si emitter. This represents 10x and 27x larger gain compared with pseudomorphic SiGe HBTs and Si control BJTs that were manufactured in parallel and had current gains of 334 and 135, respectively. The key idea in SiGe Heterojunction Bipolar Transistors (HBTs) is the incorporation of Ge in the base. This reduces the bandgap Eg, and increases the current gain. However, the amount of Ge that can be incorporated in the base is limited by material constraints such as critical thickness. Epitaxial growth of SiGe layers beyond a certain thickness can lead to strain relaxation by the generation of defects. Therefore, it is interesting to increase the Ge concentration while keeping the strain at a tolerable level.

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Strained-Silicon Heterojunction Bipolar Transistor

Cited by 16 publications

References 29 publications

Effect of uniaxial strain on characteristic frequency of scaled SiGe HBT with embedded stress raiser

Effect of uniaxial strain on characteristic frequency of scaled SiGe HBT with embedded stress raiser

Impact of strained silicon on the device performance of a bipolar charge plasma transistor

(Invited) Strained Silicon Heterojunction Bipolar Transistors

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