Strains and rotations in thin deposited films

Hirth, J. P.; Pond, R.C.

doi:10.1080/14786435.2010.481269

Cited by 22 publications

(13 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However such dislocation networks may produce a rotation of the film from the nominal orientation relationship on the substrate. The strain due to the interfacial misfit 3 at interfaces on certain A-B systems can also be fully relaxed by tilting the film and introducing steps at the interface with a frequency that tends to eliminate lattice mismatch [3,4]. When steps are present at the interface between a misfitting film/substrate system, additional defects known as disconnections may be needed to accommodate the mismatch [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…When steps are present at the interface between a misfitting film/substrate system, additional defects known as disconnections may be needed to accommodate the mismatch [5,6]. In many cases, these interfacial defects cannot fully compensate the discrepancies due to the mismatch [4]. A significant amount of theoretical work has been undertaken to describe the matching of the interfacial disconnections due to steps of different size and/or shape that are present on both sides of the interface.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Importance of interfacial step alignment in hetero-epitaxy and orientation relationships: the case of Ag equilibrated on Ni substrates. Part 1 computer simulations

Wynblatt

Chatain

2015

J Mater Sci

View full text Add to dashboard Cite

Molecular dynamics simulations of Ag films equilibrated on Ni have been performed for 12 different Ni substrate orientations. The results show that well-equilibrated films display several different orientation relationships (ORs) depending on the Ni substrate orientation: cube-on-cube, twin, oct-cube, and a series of special ORs that are a consequence of the oct-cube OR that develops on Ni(100). It is found that an important feature displayed by the observed ORs is the alignment of the step edges of the Ag film with those of the Ni substrate at the interface. Such alignment is initiated during film formation, but also tends to produce minimum energy interfaces between film and substrate. This feature of hetero-epitaxy and of the resulting ORs has not previously been emphasized.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Importance of interfacial step alignment in hetero-epitaxy and orientation relationships: the case of Ag equilibrated on Ni substrates. Part 1 computer simulations

Wynblatt

Chatain

2015

J Mater Sci

View full text Add to dashboard Cite

show abstract

“…In this latter visualization, the incoming disconnections form a wall, producing strain and rotational distortions. At equilibrium, the strains vanish and the rotational distortions are partitioned equally between the adjacent crystals [20,21], giving a final interface physically indistinguishable from that visualized above. The rotation produced by the defect wall, c, is represented by a curved arrow in Fig.…”

Section: Defect Structure Of Twin Boundariesmentioning

confidence: 98%

Stress-assisted removal of conjugation boundaries in non-modulated Ni–Mn–Ga by coordinated secondary twinning

et al. 2015

View full text Add to dashboard Cite

Observations are presented, obtained by in situ straining and conventional TEM, of a transformation mechanism by coordinated secondary twinning predicted by Mullner and King. The material studied is the martensitic phase of a non-modulated Ni-Mn-Ga alloy, which exhibits a microstructure comprising domains of lamellar matrix/twin composites. Straining these specimens induced lamellar domains to transform into their conjugate counterparts. In this process, secondary twinning generates a change of misorientation between the matrix and twin lamellae of the initial domain by nearly 23°. The orientation evolves over a region behind the transformation front about 100 nm in extent.

show abstract

“…Thus, the choice of reference state is in fact not arbitrary. As discussed by Hirth and co-workers [31][32][33], the importance of selecting proper reference states has often been overlooked in part because the best-known applications of interface dislocation models are to interfaces of relatively high symmetry, such as symmetric tilt or twist grain boundaries, for which correct reference states are easy to guess. Furthermore, many analyses assume uniform isotropic elasticity, which leads to equal partitioning of interface dislocation elastic fields between the neighboring crystals.…”

Section: Introductionmentioning

confidence: 99%

Determining the Burgers vectors and elastic strain energies of interface dislocation arrays using anisotropic elasticity theory

Vattré

Demkowicz

2013

Acta Materialia

View full text Add to dashboard Cite

A general dislocation-based formalism linking the Frank-Bilby equation and heterogeneous anisotropic elasticity theory under the fundamental condition of vanishing far-field stresses is developed. The present approach gives rise to the determination of the non-arbitrary reference state, within which the Burgers vectors of individual interface dislocations are defined. A solution strategy is also formulated to predict the correct reference state in accordance with the geometric structures of interfaces and the (unequal) partitioning of elastic fields between neighboring crystals. From this dual description of interfaces, the elastic strain energies of dislocation arrays are computed using solutions of short-range fields. Examples of several simple interfaces, namely symmetric tilt and twist grain boundaries as well as pure misfit heterophase interfaces are presented.

show abstract

Strains and rotations in thin deposited films

Cited by 22 publications

References 44 publications

Importance of interfacial step alignment in hetero-epitaxy and orientation relationships: the case of Ag equilibrated on Ni substrates. Part 1 computer simulations

Importance of interfacial step alignment in hetero-epitaxy and orientation relationships: the case of Ag equilibrated on Ni substrates. Part 1 computer simulations

Stress-assisted removal of conjugation boundaries in non-modulated Ni–Mn–Ga by coordinated secondary twinning

Determining the Burgers vectors and elastic strain energies of interface dislocation arrays using anisotropic elasticity theory

Contact Info

Product

Resources

About