Stranski-Krastanow transition and epitaxial island growth

Cullis, A. G.; Norris, David J.; Walther, T.; Migliorato, M. A.; Hopkinson, M.

doi:10.1103/physrevb.66.081305

Cited by 128 publications

(83 citation statements)

References 35 publications

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“…A recent significant result is due to Cullis et al [3,4]. By studying the crucial role played by the In segregation in the 2D-3D transition for the InGaAs/GaAs(001) growth, they have reached an important conclusion: When the average In concentration in the growing layer reaches a value in the range 80 − 85%, islanding begins.…”

mentioning

confidence: 91%

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs∕GaAs(001)

Arciprete

Placidi

Sessi

et al. 2006

Applied Physics Letters

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The two- to three-dimensional growth mode transition in the InAs∕GaAs(001) heterostructure has been investigated by means of atomic force microscopy. The kinetics of the density of three-dimensional islands indicates two transition onsets at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large dots. According to the scaling analysis and volume measurements, the transition between the two families of quantum dots and the explosive nucleation of the large ones is triggered by the erosion of the step edges.

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mentioning

confidence: 91%

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs∕GaAs(001)

Arciprete

Placidi

Sessi

et al. 2006

Applied Physics Letters

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“…11 It has been shown that only part of the deposited amount of indium contributes to the strain, by incorporation into the lattice, while the remaining indium forms a floating layer on the surface. 4 During dot formation, part of the floating indium is transferred by lateral mass transport to the dots.…”

Section: ͑1͒mentioning

confidence: 99%

Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy

Offermans

Koenraad

Nötzel

et al. 2005

Applied Physics Letters

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“…As a result, there exists an apparent critical thickness for the instability to become appreciable, which strongly depends on the composition and weakly on the deposition rate [19], as illustrated in Figure 7(b). This provides an explanation to the experimental observation of increasing wetting layer thickness for highly diluted alloys [123,211]. Effects of thermodynamic surface segregation, redistributing the material within the surface layer in order to accumulate the species of lower γ (e.g.…”

Section: Intermixingmentioning

confidence: 99%

“…Ge in SiGe or In in InGaAs) in the top ML (see experiments in Refs. [211,212]), have been investigated as well [19] and were proved just to delay the occurrence of the instability (see dotted curve in Figure 7(b)). …”

Section: Intermixingmentioning

confidence: 99%

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Bergamaschini

Salvalaglio

Backofen

et al. 2016

Advances in Physics: X

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Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing phenomena. Examples include threedimensional island formation, injection of dislocations, mixing between film and substrate atoms. Their relative importance depends on the specific growth conditions, giving rise to a very complex scenario. The need for an optimal control over heteroepitaxial films and/or nanostructures is widespread: semiconductor epitaxy by molecular beam epitaxy or chemical vapour deposition is nowadays exploited also in industrial environments. Simulation models can be precious in limiting the parameter space to be sampled while aiming at films/nanostructures with the desired properties. In order to be appealing (and useful) to an applied audience, such models must yield predictions directly comparable with experimental data. This implies matching typical time scales and sizes, while offering a satisfactory description of the main physical driving forces. It is the aim of the present review to show that continuum models of semiconductor heteroepitaxy evolved significantly, providing a promising tool (even a working tool, in some cases) to comply with the above requirements. Several examples, spanning from the nanometre to the micron scale, are illustrated. Current limitations and future research directions are also discussed.

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Stranski-Krastanow transition and epitaxial island growth

Cited by 128 publications

References 35 publications

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs∕GaAs(001)

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs∕GaAs(001)

Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

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