In
this study, we synthesize four different kinds of bis(alkylsulfanyl)methylene-substituted
4,9-dihydro-s-indaceno[1,2-b:5,6-b′]dithiophene (IDT)-based acceptor-donor-acceptor
(A-D-A) type small molecules (IDSIC, IDSIC-4F, IDSIC-4Cl, and IDSTIC)
by incorporating electron-withdrawing halogen atoms or electron-releasing
thiophene spacers. Herein, enhanced structural planarity and crystalline
intermolecular packing are induced by the sp2-hybridized
CC double bond side chains and sulfur–sulfur chalcogen
interactions. The fine control of intramolecular charge transfer modulates
the electrochemical characteristics and the resulting carrier polarity
in organic field-effect transistors (OFETs). Well-balanced ambipolar,
n-dominant, and p-dominant charge transport properties are successfully
demonstrated in OFETs by modulating the electron-donating or withdrawing
strength based on the A-D-A structural motif, resulting in hole/electron
mobilities of 0.599/0.553, 0.003/0.019, 0.092/0.897, and 0.683/0.103
cm2/V·s for IDSIC, IDSIC-4F, IDSIC-4Cl, and IDSTIC
respectively, after thermal annealing at 200 °C. Thermal annealing
of the as-cast films improves the intermolecular packing in an edge-on
fashion, which is investigated in detail by grazing incidence X-ray
scattering. Finally, complementary logic circuits, i.e., NOT, NAND,
and NOR, are fabricated by assembling p-dominant IDSTIC and n-dominant
IDSIC-4Cl OFETs. Therefore, a simple and efficient molecular design
strategy for fine tuning the charge polarity and charge transport
properties of OFET devices is presented.