Strategies for aggressive scaling of EUV multi-patterning to sub-20 nm features

Dutta, Ashim; Church, Jennifer; Lee, Joe; O'Brien, Brendan; Meli, Luciana; Liu, Chi‐Chun; Sharma, Saumya; Petrillo, Karen; Murray, Cody; Liu, Eric; Lutker-Lee, Katie; Lou, Qiaowei; Cole, Christopher; Raley, Angélique; Ko, Akiteru; Kal, Subhadeep; Kaminsky, Jake; Mosden, Aelan; Zhang, Henan; Hu, Shan; Huli, Lior; Shibata, Naoki; Hetzer, Dave; Hsieh, Chia‐Yun

doi:10.1117/12.2551727

Cited by 8 publications

(4 citation statements)

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“…Research is already underway comparing single exposure to double exposure for EUV applications. 24,25 Another strategy is to accept bad stochastics but find process alternatives that improve pattern quality. Double patterning is one such process.…”

Section: Stochasticsmentioning

confidence: 99%

International Roadmap for Devices and Systems lithography roadmap

Neisser

2021

J. Micro/Nanopattern. Mats. Metro.

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Background: Planned improvements in semiconductor chip performance have historically driven improvements in lithography and this is expected to continue in the future. The International Roadmap for Devices and Systems roadmap helps the industry plan for the future. Aim:The 2021 lithography roadmap shows requirements, possible options, and challenges for the next 15 years.Results: Critical dimensions in logic chips are now small enough that stochastics, i.e., random variations in photon, molecules, and photoresist image forming processes, introduces random variations in sizes and stochastic-driven defects. As critical dimensions get smaller, stochastics becomes a bigger challenge. The roadmap projects that despite projected improvements in tools, photoresist, device design, and patterning processes, resist dose to print will still have to roughly triple over the next 10 years to maintain acceptable stochastics unless major process or chip design changes are made. This will raise patterning costs substantially. Other patterning options are under development but they also have challenges related to defects. Edge placement error (EPE) is also a challenge for future devices. Long-term, logic device requirements will drive stacked devices, and yield and process complexity will be key challenges.Conclusions: Logic devices will drive leading edge lithography. Improved extreme ultraviolet lithography is a leading candidate but other options are possible. Key short-term challenges are stochastics, EPE, and cost. Resist dose to print is expected to rise substantially as critical dimensions shrink unless substantial process innovation occurs. For the long term, the challenges will be yield and process complexity when logic devices switch to 3D scaling

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Section: Stochasticsmentioning

confidence: 99%

International Roadmap for Devices and Systems lithography roadmap

Neisser

2021

J. Micro/Nanopattern. Mats. Metro.

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“…2 To achieve higher resolution and fidelity patterning, additional techniques and efforts are being applied in the future nodes, such as high numerical aperture (NA) and multipatterning EUV. 3,4 Concurrently, there is extensive development in high-performance resist and underlayer materials, significantly impacting EUV lithography. Traditional organic CAR polymers are nearing their resolution limit at 28 nm pitch, constrained by their large radius of gyration and acid diffusion.…”

Section: Introductionmentioning

confidence: 99%

Lithography performance improvement of MOR by underlayers

Li,

Lu,

Grannemann

et al. 2024

Advances in Patterning Materials and Processes XLI

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Metal oxide resists (MORs) have become one of the most attractive photoresist platforms that allow for high resolution and etch bias of small features while having a robust lithography performance. In this work, we present our study about improving line fidelity and reducing the dose of MOR for line space EUV lithography by applying spin-on underlayers (ULs). It is known that MOR patterning is induced by the activation during exposure and condensation of the active sites. Herein, we discuss the influence of ULs on MOR performance. A series of ULs with various chemistry, thickness, or process conditions were screened with MOR using NXE3400 EUV exposure system to print 14-nm HP line-space features. The results show that the nanobridges and scum can be alleviated, while the remaining resist thickness after development can be improved by up to 20% along with 5 -10% dose reductions. A comprehensive assessment of the ULs encompassing various chemistries examines coating quality, uniformity, and surface energy. The discussion delves into the correlation between the surface properties including morphology, interaction, etc., and their respective impacts on lithography performance. Lastly, some spin-on ULs produce up to 75% reduction of metal diffusion from the MOR into the underlying layers.

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“…33, which provides resolution at the level of 13 nm for the 5/4 nm technology nodes, applicable for large-scale production of most advanced chips with pitches of about 30 nm [3]. For further scaling beyond the 5 nm technology node, additional technological optimization methods are being implemented, which either lead to a decrease in the productivity of EUV lithographs or increase the final cost of chip production: multiple exposures [4,5], single exposures based on an optimized mask structure with quasar illumination and optical proximity correction [6,7], synthesis of new photoresist compositions [8], etc. According to Abbe's formula, the maximum resolution CD of nanostructures changes in proportion to 1 / k NA…”

Section: Introductionmentioning

confidence: 99%

Refractive X-ray optics: towards wavelengths of 13.5 nm and beyond

Demin,

Korneev,

Glagolev

et al. 2023

Preprint

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In this work we analyze the possibility of using refractive lenses for X-ray lithography in the wavelength range λ=2-20 nm, where the absorption of radiation in the lens material has a significant impact on the image quality. The general scheme of image formation in projection refractive X-ray optics using a composite objective lens consisting of biconcave elementary lenses is considered. By means of the analytical solution and finite-element simulation model, possible ways to obtain the lens transmission function taking into account the absorption of X-rays were investigated. A lens based on a beryllium (Be) thin film with a complex refractive index n=0.989+0.0015i was chosen to estimate its optical properties at a wavelength of 13.5 nm. Two mechanisms of blurring of the X-ray beam at the lens focus were studied: a mechanism associated with X-ray diffraction and a mechanism based on the absorption of X-ray radiation in the lens material. The possibility of reducing X-ray absorption by switching to diffractive and kinoform lenses is being explored. A method for constructing an image in a diffraction lens with a 4-fold reduction taking into account X-ray absorption is presented. It was shown that to obtain image resolution in the range of 20-40 nm, composite kinoform lenses consisting of a small number (N=3-6) of elementary lenses can be used.

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Strategies for aggressive scaling of EUV multi-patterning to sub-20 nm features

Cited by 8 publications

References 0 publications

International Roadmap for Devices and Systems lithography roadmap

International Roadmap for Devices and Systems lithography roadmap

Lithography performance improvement of MOR by underlayers

Refractive X-ray optics: towards wavelengths of 13.5 nm and beyond

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