Strategies for integration of donor electron spin qubits in silicon

Schenkel, T.; Liddle, J. Alexander; Bokor, Jeffrey; Persaud, A.; Park, S. J.; Shangkuan, J.; Lo, C. C.; Kwon, S.; Lyon, S. A.; Tyryshkin, Alexei M.; Rangelow, Ivo W.; Sarov, Y.; Schneider, Dieter; Ager, Joel W.; Sousa, Rogério de

doi:10.1016/j.mee.2006.01.234

Cited by 13 publications

(10 citation statements)

References 15 publications

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“…Experimentally, the qubits can be fabricated by ion implantation of donors into 28 Si [3,4]. To this connection, the controlled-NOT gate [5] and the readout of the qubit state have been investigated [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…The phonon-assisted shuttling process is largely associated with the position of the donor next to the interface of Si/SiO 2 . From the point of view of the device fabrication, the depths of the donors to the surface of the silicon material are determined by the energies of the implanted ions [3,4]. Hence, the donor depth determines the potential profile of the donorinterface system, thereby determining the energy level structure of the system.…”

Section: Introductionmentioning

confidence: 99%

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Electron–acoustic-phonon scattering in the quantum control of qubit states near the Si/SiO2 interface

2011

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electron–acoustic-phonon scattering in the quantum control of qubit states near the Si/SiO2 interface

2011

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“…Antimony is a vacancy diffuser, while phosphorous diffuses though coupling to silicon interstitials [65]. The latter are injected form the Si-SiO 2 interface during RTA which leads to segregation of P atoms to the interface [67], in a process closely related to oxidation enhanced diffusion [65]. Arsenic couples to both vacancies and interstitials.…”

Section: Placement Of Single Donorsmentioning

confidence: 99%

A Spin Quantum Bit Architecture with Coupled Donors and Quantum Dots in Silicon

Schenkel

Lo²,

Weis³

et al. 2013

Single-Atom Nanoelectronics

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Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates which combine long coherence times with the fabrication finesse of the silicon nanotechnology industry. We outline a potentially scalable spin qubit architecture where donor nuclear and electron spins are coupled to spins of electrons in quantum dots and discuss requirements for donor placement aligned to quantum dots by single ion implantation. INTRODUCTIONElectron and nuclear spins of donors in silicon have long been recognized as promising qubit candidates [1]. In isotopically purified 28 Si they exhibit long coherence times [2, 3] and their integration can benefit from the great fabrication finesse of silicon nanotechnology. Several prominent proposals for scalable quantum computer architectures with donor spin qubits have emerged [1,[4][5][6][7]. In the original Kane proposal, quantum information is stored in the nuclear spin of phosphorus atoms. Electrostatic gates facilitate transfer of quantum information form nuclear to electron spins and between electron spins, by modulation of the contact hyperfine interaction (A-gates), and the exchange coupling (J-gates), respectively. Recently, reliable detection of single electron spins [8] and the control of single electron and nuclear spins [9] states was reported for donors in silicon. Similar advances have also been reported for NVcenters in diamond [10,11] where there are many materials and integration challenges complementary to those for donors in silicon [12,13].Following Di Vincenzo's widely used criteria for the development of a large scale quantum computer [14], elements of quantum memory, quantum logic and efficient quantum communication channels have to be integrated. While single donor electron and nuclear spin readout and control have been demonstrated, the next difficult challenges are to master spin qubit coupling so that two and multi-qubit logic operations can be implemented. In early donor qubit proposals, coupling was envisioned along 1D chains of nearest neighbor coupled qubits. This ought to suffice for quantum logic demonstrations with several qubits even with limited coupling control [15] but severe limitations of nearest neighbor coupling have been pointed out [4,16]. Coherent shuttling of electrons between donors has been proposed as a path to circumvent nearest neighbor coupling challenges or to supplement nearest neighbor coupling with a longer range coupling option [4,17]. For electron shuttling, critical questions regard spin coherence of donor electron and nuclear spins during cycles of ionization and recombination. Other potential paths for long range transport of quantum information from donor spins include concepts of a spin bus [18], virtual phonon mediated coupling [19], coupling via nano-mechanical resonators [20] and spin to photon coupling in optical cavities [21] or via high Q microwave resonators [10,22, 23].In parallel to single donor spin control, control of electron spins in silicon and SiGe based quantum dots has also matured rap...

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“…To ultimately produce working quantum computers based on donor electron spin qubits in silicon, extensively theoretical and experimental investigations such as single donors [1,2], controlled-NOT gate [3], single-shot readout of a qubit state [4][5][6], and the fabrication of this qubit device using top-down [7,8] or bottom-up [9,10] techniques and so on have been made in this field. Obviously, the readout of electron spin state is crucially important in the design and application of practical devices.…”

Section: Introductionmentioning

confidence: 99%