Strategies to enhance the performance of thermoelectric materials: A review

Abstract

Various techniques to enhance the performance of thermoelectric materials have been reviewed in an unified way. The influence of synthesis techniques, post-synthesis treatment, microstructure, nanostructure, doping, and interface on thermoelectric materials' transport properties has been discussed. The research ideas given by researchers are presented in tabular forms so that young researchers and engineers can find the potential research gaps and best practices in this field. Conclusions drawn from this review would give research directions to the new researchers working in thermoelectric materials.

Enhancement in thermoelectric performance of hydrothermally synthesized Ca and Sb co-doped Bi2Te3 nanostructures

“…However, the Seebeck coefficient, electrical conductivity, and thermal conductivity are interconnected to each other. The major issue in increasing conversion efficiency is to concurrently increase these connected physical quantities [5][6][7][8]. The product S 2 σ is known as Power factor (PF).…”

Improvement in thermoelectric properties of Zn–Mn co-doped nanostructured SnTe through band engineering and chemical bond softening

“…It has a poor power factor due to high carrier concentration (∼10 20 cm −3 ), small band gap (∼0.18 eV), and large valence band separation (∼0.3 eV) [3]. Authors recently reviewed numerous techniques to enhance the TE performance of SnTe material [5]. A high carrier concentration (n) can be attributed to the presence of Sn vacancies in the SnTe matrix [6].…”

Atomic-Resolution Interfacial Reaction Mechanism between Bi2Te3-Based Alloys and Ni Electrodes

“…Thermoelectric (TE) materials are important energy materials that can realize direct conversion between thermal energy and electrical energy. − Practically, p-type TE materials and n-type TE materials are assembled to build TE devices that generate electricity under a thermal gradient and provide heating or cooling under an electrical field. − For TE devices, it is important to find compatible electrode materials with low electrical resistivity, high thermal stability, and excellent connectivity with TE materials. − As TE devices are constantly under thermal gradient and electrical field, the microstructural evolution at the electrode/TE interface plays an important role in the TE device service performance. − Interdiffusion between the electrode and the TE material can degrade the TEM performance by forming new interfacial phases, breaking TE structural integrity, reducing interfacial electrical conductivity, causing mechanical failure, and so on. Therefore, it is critical to understand the interface structure evolution at atomic resolution under prolonged thermal annealing or electrical field, to design better TE/electrode interface …”