Strategy for focused ion beam compound material removal for circuit editing

Drezner, Yariv; Greenzweig, Yuval; Raveh, Amir

doi:10.1116/1.3674280

Cited by 11 publications

(5 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Etch efficiencies for our process are an order of magnitude smaller than those for ion milling in terms of μm 3 nC −1 and two to three orders of magnitude smaller in terms of nm 3 s −1 . Taking another material as a comparison between electron and ion beam etch rates, SiO 2 etched in XeF 2(g) by electron beam [31] (0.4-1.7×10 −4 μm 3 s −1 ) is one to two orders of magnitude smaller than by ion beam [22] (0.08-1.2 μm 3 s −1 ), a similar trend to what was seen for copper. The last electron beam process listed in the table is the milling of 5-30 nm diameter pores into Si 3 N 4 with water vapor [32], yielding an average etch rate of 1.3×10 −7 μm 3 s −1 .…”

Section: Etch Rate Comparisonsupporting

confidence: 60%

“…However, copper interconnect etching has long remained in the domain of gasassisted focused-ion beam induced processing because of the lack of a volatile etch product in the absence of ion bombardment. While effective, ion-related challenges such as orientation dependence, resolution/throughput tradeoffs, ion implantation, bubble formation, selectivity to dielectrics, and redeposition persist [19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Focused electron beam induced etching of copper in sulfuric acid solutions

Boehme¹,

Bresin²,

Botman³

et al. 2015

Nanotechnology

View full text Add to dashboard Cite

We show here that copper can be locally etched by an electron-beam induced reaction in a liquid. Aqueous sulfuric acid (H2SO4) is utilized as the etchant and all experiments are conducted in an environmental scanning electron microscope. The extent of etch increases with liquid thickness and dose, and etch resolution improves with H2SO4 concentration. This approach shows the feasibility of liquid phase etching for material selectivity and has the potential for circuit editing.

show abstract

Section: Etch Rate Comparisonsupporting

confidence: 60%

Section: Introductionmentioning

confidence: 99%

Focused electron beam induced etching of copper in sulfuric acid solutions

Boehme¹,

Bresin²,

Botman³

et al. 2015

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…17 Increased material removal rates could hamper success rates by over etching and decreasing the time available for the operator to make critical editing decisions and endpointing. 17 Increased material removal rates could hamper success rates by over etching and decreasing the time available for the operator to make critical editing decisions and endpointing.…”

Section: Discussionmentioning

confidence: 99%

“…17 Exacerbating matters further is that FIB operators need to mill a finite distance into each layer to guarantee image contrast of exposed features, 18 or alternatively mill a finite distance past each layer to guarantee its complete removal. Even if the FIB operator stops milling immediately on exposure of a given layer, the Ga atoms will extend $57 nm into that layer, an appreciable distance relative to layers of 100 nm thickness.…”

Section: Introductionmentioning

confidence: 99%

Using electron spectroscopy to verify the model of Ga implanted during focused ion beam circuit editing

Niles

Spicer

Kee

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Formation of GaAs/AlGaAs constricted-channel field-effect transistor structures by focused Ga implantation and transport of electrons via focused ion beam induced localized statesMaskless sub-μ m patterning of silicon carbide using a focused ion beam in combination with wet chemical etching J.The authors use electron spectroscopy for chemical analysis to study the implantation of 50 keV Ga þ ions into electronic grade silicon, silicon oxide, silicon nitride, and silicon oxynitride typical of focused ion beam circuit editing work. The Ga þ dose naturally splits into low dose and high dose regimes with a transitional, median regime between the two. In the low dose regime (<10 16 cm À2 ), the amount of milled material is small ($10 nm) relative to typical layer thicknesses of circuits. A Gaussian implanting model with an implanting yield of $0.6 6 0.1, range of 43 6 9 nm, and straggle of 15 6 5 nm describe the data for all studied materials. The Ga atoms bind to the oxygen and nitrogen anions for oxides and nitrides, and silicon for elemental silicon. In the median regime (10 16 -10 17 cm À2 ), Ga accumulation and substrate defect formation alter a simple Gaussian model for Ga implantation although a steady state condition has not yet been reached. The high dose regime (>10 17 cm À2 ) entails a steady state condition where the implanted Ga assumes an error-function profile comprising a surface concentration as high as 50 at. % and a penetration depth of $60 nm. In the high dose regime, Ga implanted into nitride and oxide displays metallic valence (Ga 0 ) on the surface, gradually transitioning to nitride and oxide valence (Ga 3þ ) with depth.

show abstract

“…Metal and dielectric layers can be used as hard masks for achieving high resolution and throughput of the FIB nanofabrication process [ 14 ]. Modification of integrated circuits [ 15 ] is an industrially relevant application of multilayer structure processing.…”

Section: Introductionmentioning

confidence: 99%

Level set simulation of focused ion beam sputtering of a multilayer substrate

Rumyantsev,

Borgardt,

Volkov

et al. 2024

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

The evolution of a multilayer sample surface during focused ion beam processing was simulated using the level set method and experimentally studied by milling a silicon dioxide layer covering a crystalline silicon substrate. The simulation took into account the redeposition of atoms simultaneously sputtered from both layers of the sample as well as the influence of backscattered ions on the milling process. Monte Carlo simulations were applied to produce tabulated data on the angular distributions of sputtered atoms and backscattered ions.Two sets of test structures including narrow trenches and rectangular boxes with different aspect ratios were experimentally prepared, and their cross sections were visualized in scanning transmission electron microscopy images. The superimposition of the calculated structure profiles onto the images showed a satisfactory agreement between simulation and experimental results. In the case of boxes that were prepared with an asymmetric cross section, the simulation can accurately predict the depth and shape of the structures, but there is some inaccuracy in reproducing the form of the left sidewall of the structure with a large amount of the redeposited material.To further validate the developed simulation approach and gain a better understanding of the sputtering process, the distribution of oxygen atoms in the redeposited layer derived from the numerical data was compared with the corresponding elemental map acquired by energy-dispersive X-ray microanalysis.

show abstract

Strategy for focused ion beam compound material removal for circuit editing

Cited by 11 publications

References 39 publications

Focused electron beam induced etching of copper in sulfuric acid solutions

Focused electron beam induced etching of copper in sulfuric acid solutions

Using electron spectroscopy to verify the model of Ga implanted during focused ion beam circuit editing

Level set simulation of focused ion beam sputtering of a multilayer substrate

Contact Info

Product

Resources

About