A photoacoustic technique for measuring the thermal diffusivity of semiconductors is described. The method selected for mounting the samples allows to minimize, in the considered frequency range, the effect of thermoelastic bending. The results reported are related to single‐crystal FZ n‐type silicon wafers of different thickness and dopant concentration. The thermal diffusivity values are in the range quoted in literature and are shown to depend lightly on the dopant concentration in the wafer.