2002
DOI: 10.1016/s0924-4247(02)00047-x
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Strength and leak testing of plasma activated bonded interfaces

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Cited by 24 publications
(19 citation statements)
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“…This is comparable to the strength of glass-silicon bonds of 10-15 and up to 30 MPa reported in the literature (Lee Obermeier 1995). The bond strengths of 12-18 MPa obtained in this work are higher than the 6-10 MPa reported for anodic bonding to thin-film deposited glass (Visser et al 2002a), the 10 MPa reported for gold thermo compression bonding (Taklo et al 2004), and the 4-8 MPa reported for plasma activated bonding (Visser et al 2002b). The TEM pictures in Fig.…”
Section: Discussioncontrasting
confidence: 59%
“…This is comparable to the strength of glass-silicon bonds of 10-15 and up to 30 MPa reported in the literature (Lee Obermeier 1995). The bond strengths of 12-18 MPa obtained in this work are higher than the 6-10 MPa reported for anodic bonding to thin-film deposited glass (Visser et al 2002a), the 10 MPa reported for gold thermo compression bonding (Taklo et al 2004), and the 4-8 MPa reported for plasma activated bonding (Visser et al 2002b). The TEM pictures in Fig.…”
Section: Discussioncontrasting
confidence: 59%
“…13 Therefore, tensile and shear strength measurements were performed in the current work. The average tensile strengths obtained on the presented structures are similar to the 9.0 MPa found by Visser et al, 8 and higher than the 4.6 MPa found earlier by our group. 13 The student t test using a 95% confidence interval showed that the there was no statistically significant difference between the tensile or shear strengths for the different frame widths.…”
Section: Discussionsupporting
confidence: 90%
“…22 Visser et al found a maximum leak rate of 8 × 10 -13 mbar·l·s −1 for low-temperature direct Si-Si bonded seals of width 20-70 μm. 8 There is no disagreement between these three estimates, as they all represent maxima, limited by their respective measurement technique. In all three cases, the actual leak rate could be significantly lower.…”
Section: Discussionmentioning
confidence: 96%
“…In the literature, there is evidence of a beneficial aging effect, where bond strength improves over the course of days and weeks for wafers stored in room conditions [14], [29], [35]. Thus, bonded wafers were allowed to rest for 12 days before further processing.…”
Section: G Surface Cleaning Plasma Activation and Direct Bondingmentioning
confidence: 99%