Strength and Leak Testing of Plasma Activated Bonded Interfaces

Visser, M M; Weichel, S.; Reus, R. de; Hanneborg, A.

doi:10.1007/978-3-642-59497-7_328

Cited by 1 publication

(1 citation statement)

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“…As a result, researchers have turned to bond at low temperature (LT) enabling the formation of novel semiconductor structures for mechanical as well as electrical applications. Unfortunately, fundamental knowledge on LT bonding mechanisms is still lacking.The inherent advantages are the low thermal budget during the whole bonding process, no need for intermediate layers, the ability of good hermetic sealing and the high bond strength achieved (2)(3)(4)(5)(6). Bond strengths reached at RT are comparable to those obtained for wet chemical cleaned, bonded wafer pairs annealed at 600°C and above (7,8).…”

Section: Introductionmentioning

confidence: 93%

Relation Between Electrical and Mechanical Characteristics of Low-Temperature Bonded Si/Si Interfaces

2006

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The bonding energy of low-temperature plasma bonded siliconsilicon interfaces is correlated with their electrical properties. From current versus voltage and capacitance versus voltage data, mobile ion charges are shown to play a considerable role for the bond force. By comparing the evolution of the bonding strength during the first 48 hours after bonding with that of ionic charge in the interlayer and interface electron state concentrations, we demonstrate a relation between these quantities for low temperature plasma bonded silicon surfaces. The results suggest that mobile ions in an interfacial layer change the charge distribution, resistance, capacitance, interface state density distributions and correlate with the bonding energy of the siliconsilicon junction.

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