Strengthened magnetoelectric multiferroic response in (K0.5Na0.5[Nb1-xFex/2Mnx/2]O3) ceramics

Magnetoelectrics: Three Centuries of Research Heading Towards the 4.0 Industrial Revolution

“…The ME response is observed as an intrinsic effect typically at low temperatures (<10 K), that can be used for applications in data storage, spintronics or memories [ 2 ]. Shalini et al [ 21 ] used a standard solid-state reaction method [ 22 ] by taking stoichiometric quantities of K 2 CO 3 , Na 2 CO 3 , Nb 2 O 5 , Fe 2 O 3 MnO 2 , mixed in an agate mortar and calcined at 1373.15 K for two hours, creating the multiferroic ceramic K 0.5 Na 0.5 [Nb 1−x Fe x/2 Mn x/2 ]O 3 (x = 0.025, 0.05, 0.075, 0.10) [ 21 ]. This work verifies the behaviour in alkali niobate-based ferroelectric called potassium sodium niobite (KNN), a lead-free ceramic through the substitution of transition elements.…”

“…This work verifies the behaviour in alkali niobate-based ferroelectric called potassium sodium niobite (KNN), a lead-free ceramic through the substitution of transition elements. This multiferroic ceramic material achieved a longitudinal ME coefficient (α ME ) value of 3.45 mV·cm −1 ·Oe −1 with an H DC of 1000 Oe and H AC of 60 Oe [ 21 ].…”

“…The ME response is observed as an intrinsic effect typically at low temperatures (<10 K), that can be used for applications in data storage, spintronics or memories [2]. Shalini et al [21] used a standard solid-state reaction method [22] Pikula et al [23] prepared a Bi 0.5 Nd 0.5 FeO 3 solid solution using a standard solid-state reaction method. The stoichiometric mixture of oxide powders was grinded in a planetary ball mill for 24 h. The obtained mixture was consolidated into pellets and calcined at 1023 K for 10 h. Then, the material was crushed and milled in ethyl alcohol.…”

“…Yang et al [36] developed single-phase multiferroic ceramics of (1 − x) BaTiO 3 − x BiFeO 3 (BT − x BFO) synthesized by solid-solution method that exhibited an ME coefficient of 0.87 mV•cm −1 •Oe −1 , providing a possibility of developing electrically or magnetically tunable thin-film devices. The reported single-phase ME materials, as well as their production technique are summarized in Figure 7, being observed that the ME voltage coefficient can assume a broad range of values, from less than (co-precipitation) [28] (PLD) [25] (PLD) [34] (Sol-gel) [20] (Sol-gel) [31] (Solid-state) [30] (Solid-state) [27] (Solid-state) [26] (Solid-state) [24] (Solid-state) [23] (Solid-state) [21] (Solid-state)…”