Stress analysis and lifetime estimation on power MOSFETs for automotive ABS systems

Testa, A.; De, S.; Panarello, S.; Patanè, Salvatore; Letor, R.; Russo, S.; Poma, S.; Patti, Davide

doi:10.1109/pesc.2008.4592088

Cited by 25 publications

(12 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The resulting rise in junction temperature (T J ) of the MOSFET will depend on the transient thermal impedance (Z TH ) of the MOSFET as well as the magnitude of the inductance (L), the MOSFET's B VDSS and the I AV [5]. An example of such an application is the anti-lock braking system which is comprised of a low-side power MOSFET switch that connects the brake pump to the battery and is switched by a pressure control system connected to the gate [7]. Every time the MOSFET is switched on and the brake pump is connected to the battery, energy is stored in the inductors of the brake pump.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs

Alatise

Kennedy

Petkos

et al. 2010

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

“…In the operating life of the vehicle's automotive system, this avalanche event can occur over 50 million times [7].…”

Section: Introductionmentioning

confidence: 99%

The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs

Alatise

Kennedy

Petkos

et al. 2010

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

“…In the automotive field, this configuration is adopted to drivel: relays, DC motors, electromagnetic valves and direct high-pressure injectors. In these applications the device is generally operated in energy absorption mode, dissipating a large amount of power when turning off [1].…”

Section: High Side Driving Inductive Loadsmentioning

confidence: 99%

Reliability assessment of low-voltage MOSFETs driving inductive loads

Testa

Panarello

et al. 2010

2010 IEEE International Symposium on Industrial Electronics

Self Cite

View full text Add to dashboard Cite

Reliability and compactness are two aspects often fighting among themselves when speaking about power electronics, but, indeed, they are the keys for the success of any new circuit or device. Reliability, in particular, is the word of the moment, powering the development of advanced device design techniques having the reliability as a major goal. Endurance tests is the traditional way to evaluate the reliability of power devices. However, they are very time expensive, requiring even months of uninterrupted testing. An interesting alternative is the estimation of the reliability of a device through a suitable model, but, no standard techniques have been developed up to now to accomplish this task. A possible approach is followed in this paper to assess the reliability of Power MOSFETs driving inductive loads, by exploitation of a dynamic analysis of the temperature distribution over the source metal. Coupling such an analysis with a reliability model, carried out from the Coffin-Manson law, the device life time is estimated. Such a procedure is then used to assess the reliability of Power MOS devices tasked to control the brake pump in a modern vehicle. The consistence of the reliability estimation is confirmed by comparison with results of endurance tests. The described approach can be usefully applied to a large set of applications of MOSFETs in the automotive field.

show abstract

“…Main power transistors are MOSFET and IGBT [1]. Tests of reliability have been widely used to understand failure mechanisms and, thus, to improve their characteristics and performances [2]. Failure mechanisms can be of different species and they affect the reliability of semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

Innovative instrumentation for HTRB tests on semiconductor power devices

Consentino¹,

Pasquale²,

Galiano³

et al. 2013

AEIT Annual Conference 2013

View full text Add to dashboard Cite

an automated system designed to perform reliability tests on power transistors is reported. An innovative non-standard procedure for High Temperature Reverse Bias complemented with Electrical Characterization Test based on the division of the total stress time in several short periods is proposed. Thanks to a purposely designed mini-heater the system controls the individual chip temperature on the device under test when testing many devices at the same time. Electrical parameters can be periodically measured to identify early warnings of failure and stopping the same test avoiding an uncontrolled thermal runaway process. When such event occurs the test was stopped only for the involved devices.

show abstract

Stress analysis and lifetime estimation on power MOSFETs for automotive ABS systems

Cited by 25 publications

References 3 publications

The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs

The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs

Reliability assessment of low-voltage MOSFETs driving inductive loads

Innovative instrumentation for HTRB tests on semiconductor power devices

Contact Info

Product

Resources

About