The third generation of superhard semiconductor materials, represented by single-crystal SiC, is used widely in microelectronics due to their excellent physical and mechanical properties. However, their high hardness and brittleness become the bottleneck of their development. Diamond wire saw (DWS) has become the mainstream tool for sawing hard and brittle crystal materials. However, the diamond abrasive is consolidated on the core wire through resin or electroplated nickel, and the holding strength is not high. When sawing superhard crystal materials, the e ciency is low. In order to improve the sawing e ciency of superhard crystal materials, it is of great signi cance to improve the wear resistance of wire saw and the holding strength of abrasive particles. Electro-spark deposition (ESD) can deposit electrode materials on the substrate with low heat input to achieve metallurgical bonding between metal materials. It can effectively improve the gripping strength of the abrasive grains. And the sawing ability of the wire saw to make the consolidated DWS by the ESD process. In this paper, the ESD equipment has been designed according to the characteristics of the ESDDWS process. The discharge gap size and electrode consumption are monitored in real-time by a single-chip microcomputer (SCM). Orthogonal experiments were carried out for the two motion modes. The effects of process parameters, such as (A) Grain size, (B) Abrasive content, (C) Pulse duration time, (D) Compacting pressure, (E) Current, (F) Electrode diameter, (G) Pulse interval time, (H) Reciprocating times, (I) Wire feed speed, on the quality of ESDDWS were analyzed.Through the extremum difference analysis, the optimal parameter combinations of ESDDWS were obtained. The results of the validation experiment are better than the original experimental results.