Stress Analysis on Single-Crystal Diamonds by Raman Spectroscopy 3D Mapping

Liscia, Emiliano Javier Di; Álvarez, F.; Burgos, E.; Halac, Emilia B.; Huck, H.; Reinoso, M.

doi:10.4236/msa.2013.43023

Cited by 19 publications

(18 citation statements)

References 20 publications

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“…The FWHM of Raman bands is related to the crystal quality in terms of amount of plastic deformation and it is sensitive to structural parameters as size, shape and distribution of grains . In details, a slight shift of Raman peaks towards higher wavenumbers is observed for TM180‐2 and TM180‐3 samples, suggesting a treatment induced compressive stress of the lattice . The blue shift is more evident for the sample treated with a lower dose (TM180‐2).…”

Section: Resultsmentioning

confidence: 96%

Absorptance enhancement in fs‐laser‐treated CVD diamond

Calvani

Bellucci

Girolami

et al. 2015

Physica Status Solidi (a)

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This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.Surface texturing by fs-laser pulses has been performed in order to enhance optical absorptance of chemical vapour deposited diamond. The induced surface structures have been studied as a function of treatment dose D. Periodic structure with ripples of 170 nm has been observed for a D ¼ 5.0 kJ cm À2 , although not well defined texturing and damaged structures have been obtained for both lower and higher doses. Raman investigations point out negligible changes in crystal bulk for all investigated samples, thus suggesting that physical properties of the crystal were not changed by the treatment. Optical absorptance is strongly enhanced by fs-laser texturing and it is an increasing function of the treatment dose. The absorptance of solar spectrum saturates up to values larger than 90%. The obtained outstanding enhancement of photon absorption represents a preliminary and promising step for the exploitation of synthetic diamond in future high-efficient conversion devices for solar concentration based on photon-enhanced thermionic emission effect.

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Section: Resultsmentioning

confidence: 96%

Absorptance enhancement in fs‐laser‐treated CVD diamond

Calvani

Bellucci

Girolami

et al. 2015

Physica Status Solidi (a)

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“…Averaging the data obtained in numerous publications, see e.g. [51][52][53][54][55][56], we assume that the rate of the Raman line shift is about ± 2.5 cm −1 /GPa (positive for compression and negative for expansion). Thus, the maximum stress of compression and expansion observed at the most stressed boundary 4-5 is about 0.4 GPa and 1.5 GPa respectively.…”

Section: Striations and Stressmentioning

confidence: 99%

Nitrogen-doped CVD diamond: Nitrogen concentration, color and internal stress

Зайцев

Kazuchits

et al. 2020

Diamond and Related Materials

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Single crystal CVD diamond has been grown on (100)-oriented CVD diamond seed in six layers to a total thickness of 4.3 mm, each layer being grown in gas with increasing concentration of nitrogen. The nitrogen doping efficiency, distribution of color and internal stress have been studied by SIMS, optical absorption, Raman spectroscopy and birefringence imaging. It is shown that nitrogen doping is very non-uniform. This non-uniformity is explained by the terraced growth of CVD diamond. The color of the nitrogen-doped diamond is grayish-brown with color intensity gradually increasing with nitrogen concentration. The absorption spectra are analyzed in terms of two continua representing brown and gray color components. The brown absorption continuum exponentially rises towards short wavelength. Its intensity correlates with the concentration of nitrogen C-defects. Small vacancy clusters are discussed as the defects responsible for the brown absorption continuum. The gray absorption continuum has weak and almost linear spectral dependence through the near infrared and visible spectral range. It is ascribed to carbon nanoclusters which may form in plasma and get trapped into growing diamond. It is suggested that Mie light scattering on the carbon nanoclusters substantially contributes to the gray absorption continuum and determines its weak spectral dependence. A Raman line at a wavenumber of 1550 cm −1 is described as a characteristic feature of the carbon nanoclusters. The striation pattern of brown/gray color follows the pattern of anomalous birefringence suggesting that the vacancy clusters and carbon inclusions are the main cause of internal stress in CVD diamond. A conclusion is made that high perfection of seed surface at microscale is not a required condition for growth of low-stress, low-inclusion single crystal CVD diamond. Crystallographic order at macroscale is more important requirement for the seed surface.

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“…However, a more consistent model which explains all occurring shifts is the presence of strain/stress in the diamond nanoparticles. The Raman shift n D˜in the presence of compressive and tensile stress is given by [34,35]:…”

Section: Strainmentioning

confidence: 99%

Strongly inhomogeneous distribution of spectral properties of silicon-vacancy color centers in nanodiamonds

et al. 2018

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The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that SiV centers in nanodiamonds exhibit a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range ≈730-742 nm and broad linewidths between 5 and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 and 835 nm, but narrow linewidths from below 1 up to 4 nm. Supported by ab initio Kohn-Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of a new class of silicon-related defects. Whereas single photon emission is demonstrated for defect centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics.

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Stress Analysis on Single-Crystal Diamonds by Raman Spectroscopy 3D Mapping

Cited by 19 publications

References 20 publications

Absorptance enhancement in fs‐laser‐treated CVD diamond

Absorptance enhancement in fs‐laser‐treated CVD diamond

Nitrogen-doped CVD diamond: Nitrogen concentration, color and internal stress

Strongly inhomogeneous distribution of spectral properties of silicon-vacancy color centers in nanodiamonds

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