Stress and grain growth in thin films

Thompson, Carl V.; Carel, R.

doi:10.1016/0022-5096(96)00022-1

Cited by 458 publications

(295 citation statements)

References 33 publications

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“…21,22 Both of these types of stress result in mass transport of Sn atoms from the highly stressed region to the whisker root; this is generally accepted as the phenomenon driving growth of tin whiskers and hillocks. 18,21 Because stress, global or local, also depends on crystallographic texture, which may be predominantly determined by electrodeposition process conditions, for example current density, deposition temperature, bath agitation, etc., [23][24][25][26][27] it is important to study such correlations; we summarize below various reports addressing these issues.…”

Section: Introductionmentioning

confidence: 99%

Manipulating Crystallographic Texture of Sn Coatings by Optimization of Electrodeposition Process Conditions to Suppress Growth of Whiskers

Jagtap

Kumar

2015

Journal of Elec Materi

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The effects of two major electrodeposition process conditions, electrolyte bath temperature and current density, on the microstructure and crystallographic texture of pure tin coatings on brass and, ultimately, on the extent of whisker formation have been examined. The grain size of the deposited coatings increased with increasing electrolyte bath temperature and current density, which significantly affected the dominant texture: (211) or (420) was the dominant texture at low current densities whereas, depending on deposition temperature, (200) or (220) became the dominant texture at high current densities. After deposition, coatings were subjected to different environmental conditions, for example isothermal aging (room temperature, 50°C, or 150°C) for up to 90 days and thermal cycling between À25°C and 85°C for 100 cycles, and whisker growth was studied. The Sn coatings with low Miller index planes, for example (200) and (220), and with moderate aging temperature were more prone to whiskering than coating with high Miller index planes, for example (420), and high aging temperature. A processing route involving the optimum combination of current density and deposition temperature is proposed for suppressing whisker growth.

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Section: Introductionmentioning

confidence: 99%

Manipulating Crystallographic Texture of Sn Coatings by Optimization of Electrodeposition Process Conditions to Suppress Growth of Whiskers

Jagtap

Kumar

2015

Journal of Elec Materi

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“…[6][7][8][9][10] Typical deposition techniques that have been used to grow Au thin films are pulse laser deposition (PLD) 11 and electroless deposition, 12 or sputtering. In the case of the sputtering technique, typically, polycrystalline films are obtained with face centered cubic (fcc) (111) texture perpendicular to the film plane, 13 where grain size determines its functionality. For that reason, several after grown processes, such as ion irradiation 14 and annealing, can be used to change the initial properties of gold films after deposition.…”

Section: Introductionmentioning

confidence: 99%

Surface acoustic wave velocity of gold films deposited on silicon substrates at different temperatures

Salas

Riobóo

Prieto

et al. 2011

Journal of Applied Physics

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Au thin films have been deposited by DC magnetron sputtering on Si (001) substrates at different substrate temperatures, ranging from 200 K to 450 K. With increasing temperature, the expected crystallinity and morphology of the Au thin film are clearly improved, as shown by x ray diffraction, atomic force microscopy and scanning electron microscopy experiments. Parallel to this, the surface acoustic wave propagation velocity shows a clear enhancement toward the ideal values obtained from numerical simulations of a Au thin film on Si (001) substrate. Moreover, a very thin and slightly rough interlayer between the Si (001) substrate and the Au thin film is developed for temperatures above 350 K. The composition and nature of this interlayer is not known. This interlayer may be responsible for the steep change in the structural and elastic properties of the Au thin films at the higher temperatures and possibly also for an improvement of the adhesion properties of the Au on the Si (001) substrate.

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“…Here phenomenological Hall-Petch type models, 4 based on film thickness and plastic deformation erroneously predicted square root dependence of stress on thickness. [5][6][7] By combining the 30 year old grain boundary shrinkage model, modern grain growth models for nonrecrystallizing films and accurate stress gradient measurents we show that stress and grainsize codevelop in hard polycrystalline metal films.…”

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confidence: 96%

Tensile stress in hard metal films

Janssen

Dammers²,

Sivel³

et al. 2003

Applied Physics Letters

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Thin films on substrates are usually in a stressed state. An important, but trivial, contribution to that stress stems from the difference in thermal expansion coefficient of substrate and film. Much more interesting are the intrinsic stresses, resulting from the growth and/or microstructure of the film. Intrinsic compressive stress was explained by d'Heurle in 1970. Intrinsic tensile stress for recrystallizing metal films was treated succesfully by Doljack and Hoffman in 1972. In the present letter we explain the occurrence of tensile stress in nonrecrystallizing metal films. The explanation is based on modern grain growth models and accurate stress measurements. The key ingredient to the explanation is the proof of the existence of a stress gradient in nonrecrystallizing metal films.

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Stress and grain growth in thin films

Cited by 458 publications

References 33 publications

Manipulating Crystallographic Texture of Sn Coatings by Optimization of Electrodeposition Process Conditions to Suppress Growth of Whiskers

Manipulating Crystallographic Texture of Sn Coatings by Optimization of Electrodeposition Process Conditions to Suppress Growth of Whiskers

Surface acoustic wave velocity of gold films deposited on silicon substrates at different temperatures

Tensile stress in hard metal films

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