Artificially controlled stress anisotropy and magnetic properties of FeTaN thin filmsIn this study 2000 Å FeTaN thin films are annealed at 150°C in both longitudinal and transverse magnetic fields. Both anneals result in a decrease in H K , which is shown to be a result of interstitial N, however, the transverse anneal results in a 90°rotation of H K and a 33% larger decrease in the magnitude of H K as compared to the longitudinal anneal. Subsequent transverse field anneals show that H K is completely reversible in relatively short times at any temperature above 75°C. Our results are consistent with the diffusion of interstitial N being responsible for the rotatable behavior of H K in FeTaN.