Stress Control in 3C-SiC Films Grown on Si(111)

Zgheib, Charbel; Masri, P.; Weih, Petia; Ambacher, O.; Pezoldt, Jörg

doi:10.4028/www.scientific.net/msf.457-460.301

Cited by 6 publications

(3 citation statements)

References 11 publications

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“…Gradient stress (Δ σ ) is defined as σ ( z = t ) − σ ( z = 0) and mean stress as σ ( z ) or mean value across the film thickness . Many literature reports have focused on understanding the residual stress behavior, as the impact of the mean stress could be beneficial or disadvantageous depending on the application . The residual stress further influences both static and dynamic performances of single‐clamped and double‐clamped resonators, as will be discussed in Sections 7 and 8 (respectively).…”

Section: Heteroepitaxy Of 3c‐sic On Simentioning

confidence: 99%

“…At the same time, flat cantilevers are required for most microsensors . Different methods are reported for tailoring the gradient stress within the epitaxial films and thus the cantilever intrinsic bending, such as variation in growth parameters , metallization process , and application of multilayer structures .…”

Section: Gradient Stress Impact On Sic Cantilever Static Behaviormentioning

confidence: 99%

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Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

Kermany

Bennett

Valenzuela

et al. 2016

Phys. Status Solidi A

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Epitaxial silicon carbide is promising for chemical resonant sensing applications due to its excellent mechanical, thermal, and biochemical properties. This paper reviews six important aspects of (i) silicon carbide heteroepitaxial growth and residual stress; (ii) silicon carbide beam resonators, resonator types, and fabrication processes; (iii) sensing principles, dynamic sensing mechanical performance, and transduction techniques; (iv) damping parameters; (v) mean stress influence on mass sensitivity of SiC flexural microbridge resonators; and (vi) gradient stress impact on SiC cantilever static behavior. The primary goal is to suggest the means to improve the mass sensitivity parameter and application range of epitaxial silicon carbide microbeam resonators and benchmark it with other relevant materials.

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Section: Heteroepitaxy Of 3c‐sic On Simentioning

confidence: 99%

Section: Gradient Stress Impact On Sic Cantilever Static Behaviormentioning

confidence: 99%

Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

Kermany

Bennett

Valenzuela

et al. 2016

Phys. Status Solidi A

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“…Most literature reports have focused on the tuning of film deposition parameters to alter stress gradients, 7,26 or metallization of the thin film 8,27,28 in order to manipulate the intrinsic bending of the released structures. Some also used multilayer structures in order to balance and control the intrinsic bending.…”

mentioning

confidence: 99%

Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers

Kermany

Iacopi

2015

Journal of Applied Physics

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We introduce a simple methodology to predict and tailor the intrinsic bending of a cantilever made of a single thin film of hetero-epitaxial silicon carbide grown on silicon. The combination of our novel method for the depth profiling of residual stress with a few nm resolution with finite element modelling allows for the prediction of the bending behaviour with great accuracy. We also demonstrate experimentally that a silicon carbide cantilever made of one distinct film type can be engineered to obtain the desired degree of either upward, flat, or downward bending, by selecting the appropriate thickness and cantilever geometry. A precise control of cantilever bending is crucial for MEMS applications such as micro-actuators, micro-switches, and resonant sensors. I. INTRODUCTION Epitaxial cubic silicon carbide (3C-SiC) is a leading material for micro electrical mechanical systems (MEMS) due to its excellent mechanical properties when silicon (Si) has limitations. 1-4 Furthermore, it can be grown on Si substrate which results in large area, easy micromachining, and low cost production.

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Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition

Zgheib

Lubov

Kulikov

et al. 2021

Physica Status Solidi (a)

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Secondary ion mass spectroscopy, Fourier transformed infrared spectroscopy, ellipsometry, reflection high energy diffraction and transmission electron microscopy are used to gain inside into the effect of Ge on the formation of ultrathin 3C‐SiC layers on Si(111) substrates. Accompanying the experimental investigations with simulations it is found that the ultrathin single crystalline 3C‐SiC layer is formed on top of a gradient Si1–x–yGexCy buffer layer due to a complex alloying and alloy decomposition processes promoted by carbon and germanium interdiffusion and SiC nucleation. This approach allows tuning residual stress at very early growth stages as well as the interface properties of the 3C‐SiC/Si heterostructure. Useful yields of secondary ions of Ge in Si matrix and Si dimer are estimated.

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Stress Control in 3C-SiC Films Grown on Si(111)

Cited by 6 publications

References 11 publications

Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

Potential of epitaxial silicon carbide microbeam resonators for chemical sensing

Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers

Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition

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