Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Abstract

Polycrystalline Pb(Zr0.52Ti0.48)O3 (PZT) thick films (thickness ∼10 μm) were successfully fabricated by using a novel aerosol deposition technique on Si wafer, sapphire, and single crystal yitria stabilized zirconia (YSZ) wafer substrates with Pt electrodes and their dielectric, ferroelectric, and piezoelectric properties, and in-plane stresses were investigated. The films with different stress conditions were simply controlled by the coefficient of thermal expansion (CTE) misfit of PZT films and substrates. The results showed that the films bearing in-plane compressive stress deposited on the YSZ and sapphire substrates have superior dielectric, ferroelectric (∼90%), and piezoelectric (>200%) properties over that of the Si wafer. Among these three substrates, YSZ shows superior properties of the PZT films. However, films on Si wafer with tensile stress present lower properties. We believed that in-plane compressive stresses within the films are benefited, the formation of c-domain parallel to the thickness direction resulting in the higher piezoelectric properties. These results suggest that the properties of polycrystalline PZT thick films can be adjusted by simply choosing the substrates with different CTEs.

Upshift of Phase Transition Temperature in Nanostructured PbTiO3 Thick Film for High Temperature Applications

“…These values are comparable to or higher than those obtained from PZT thick films grown by the AD process. 22 The shape of the P−E hysteresis loop confirms ferroelectricity and good breakdown strength in the AD PT film after thermal annealing for grain growth/crystallization. It is also encouraging that the film was not cracked following the polarization reversal.…”

Self-Poling of BiFeO3 Thick Films

“…53 According to the linear CTEs at RT, (Fig. 1d) and weak downward self-poling, although the exact mechanism is not clear.…”

“…In the case of the BFO thick film sintered below the T C , sources of stresses other than those related to the ferroelectric-paraelectric transition should be considered, particularly the stresses induced by the thermal expansion coefficient (CTE) mismatch between the thick film and the substrate material, which are known to have a great impact on the phase composition, 43 crystal structure 41,53 and piezoelectric properties of a thick film. 53 According to the linear CTEs at RT, (Fig.…”

A flexible, high-performance magnetoelectric heterostructure of (001) oriented Pb(Zr0.52Ti0.48)O3film grown on Ni foil

“…[8][9][10][11] Among the piezoelectric/magnetostrictive constituents available for fabricating an ME heterostructure, the combination of Pb(Zr,Ti)O 3 (PZT) and Ni is an attractive option, as PZT has high piezoelectric response and Ni is an inexpensive and widely available magnetostrictive base metal. Further, the similar mechanical impedances of PZT (25)(26)(27)(28)(29)(30) efficient strain transfer across the PZT/Ni interface. This, in turn, should produce strong ME coupling in PZT/Ni composites.…”

“…[24][25][26][27] The large c-domain population in the PZT film on Ni could be due to a combination of the compressive stress induced by the thermal expansion mismatch between PZT and Ni and the relaxation of stress by bending of the thin foil structure. 4,5,22,29 The ME response of the PZT/Ni composite corona poled at different DC voltages is shown in Fig. 3(c).…”