Stress-controlled zero-field spin splitting in silicon carbide

Abstract

We report the influence of static mechanical deformation on the zero-field spin splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially resolved confocal Raman spectroscopy. The zero-field spin splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically detected magnetic resonance, reveals significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which is 0.75 GHz/strain for the V1/V3 centers and 0.5 GHz/strain for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize fine tuning of spin transition energies in SiC by deformation.

Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface

“…In an inhomogeneously broadened ensemble with a variation of the zero-field splitting 2D, the critical temperature T c also varies. We suppose that since both variations are likely to be caused by local deformations [43], so there exists a correlation…”

Silicon Carbide Photonics Bridging Quantum Technology

“…We will describe the optically and electrically driven quantum emitters originating from color centers ,− and the current main challenges to achieve ideal single photon emission in this material, including their emission enhancement via material nanostructuring and their spectral and charge control in electrical devices . Specifically, we will explain the role of SiC quantum emitters as spin-photon interfaces , for remote quantum entanglement, quantum gates, and quantum photonics. ,, We will also introduce novel applications and technologies in quantum sensing of the magnetic field, − electric field, − temperature, − and strain. ,− For quantum sensing applications, photonics can play a central role in enhancing the sensitivity and acquisition time of otherwise weak quantum processes and to improve integration and scalability of future devices.…”

Acoustically induced coherent spin trapping

“…In contrast, if the driving field is the oscillating strain , then the different extension of the electron wave function in the ground and excited states leads typically to different spin-strain interaction constants Ξ (g) ≠ Ξ (e) (15,16,27) and, therefore, to different Rabi frequencies ħ Ω R ( g,e ) = Ξ ( g,e ) ε , so that CST can be realized experimentally.…”

“…If the spin system has the same g -factor for the ground and excited states ( 26 ), then this requirement cannot be fulfilled using RF magnetic fields because normalħΩRfalse(gfalse)=normalħΩRfalse(efalse)=gμBbrf. In contrast, if the driving field is the oscillating strain ε, then the different extension of the electron wave function in the ground and excited states leads typically to different spin-strain interaction constants Ξ ( g ) ≠ Ξ ( e ) ( 15 , 16 , 27 ) and, therefore, to different Rabi frequencies normalħΩR(g,e)=Ξ(g,e)normalε, so that CST can be realized experimentally.…”