Stress distribution in chemical mechanical polishing

Srinivasa-Murthy, C; Wang, D; Beaudoin, Stephen P.; Bibby, T.; Holland, Karey; Cale, Timothy S.

doi:10.1016/s0040-6090(97)00433-1

Cited by 100 publications

(58 citation statements)

References 9 publications

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“…It is also shown that the outer rim of the disk sustained a higher pressure than the middle of the disk. Similar phenomena were also found in other independent experimental results [9] and simulation results [17].…”

Section: Pressure Distribution On Disksupporting

confidence: 91%

A material removal model for polishing glass–ceramic and aluminum magnesium storage disks

Wang

Lin

Hochen

2002

International Journal of Machine Tools and Manufacture

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In this paper, a model is proposed to more closely describe the relationships between polishing parameters and the material removal rate for the commonly used storage disks in PC. Experiments were conducted to verify this model. It is shown that the proposed model predicts the material removal rate more accurately than existing models. The proposed model is expected to apply to different materials polished by similar processes. The FEM analysis of the applied polishing pressure well explained the current empirical results. 

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Section: Pressure Distribution On Disksupporting

confidence: 91%

A material removal model for polishing glass–ceramic and aluminum magnesium storage disks

Wang

Lin

Hochen

2002

International Journal of Machine Tools and Manufacture

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“…Finally, it would increase dramatically and peak significantly at the edge. This result was similar to that of [5]. Figure 8 is an experimental removal rate variation diagram by using two different carrier films.…”

Section: A Summary Of the Chemical Mechanical Polishing Process Simulsupporting

confidence: 82%

“…The material properties and geometries are listed in Table 1. [5] 5 Results and discussion Von Mises proposed in 1913 that yielding occurs when a combination of stresses (i.e., von Mises stress) exceeds the material's yield strength. The von Mises stress applied in 2D axisymmetric quasi-static CMP model can be simplified as…”

Section: A Summary Of the Chemical Mechanical Polishing Process Simulmentioning

confidence: 99%

“…The simulation results using the commercial software package I-DEAS confirmed that the von Mises stress distribution did have an effect on the surface nonuniformity. Srinivasa-Murthy et al [5] established a 3D elastic model to study the variation of the wafer surface when sustaining force during the CMP process. The result simulated by the commercial software package ANSYS showed that the peak of the von Mises stress distribution occurs at the edge.…”

Section: Introductionmentioning

confidence: 99%

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A study of a finite element model for the chemical mechanical polishing process

Lin

2004

The International Journal of Advanced Manufacturing Technology

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In this paper, relative velocity at a given point on the wafer was first derived. The revolutions of wafer and pad are assumed the same and the axisymmetric uniformly distributed pressure form is given. Thus, a 2D axisymmetric quasic-static model for chemical-mechanical polishing process (CMP) was established. Based on the principle of minimum total potential energy and axisymmetric elastic stress-strain relations, a 2D axisymmetric quasic-static finite element model for CMP was thus established. In this model, the four-layer structures including wafer carrier, carrier film, wafer and pad are involved. The von Mises stress distributions on the wafer surface were analysed, the effects of axial, hoop, radial and shear stresses to von Mises stress and the effects of axial, hoop, radial and shear strains to deformation of the wafer were investigated. The findings indicate that near the wafer centre, von Mises stress distribution on the wafer surface was almost uniform, then increased gradually with a small amount. However, near the wafer edge, it would decrease in a large range. Finally, it would increase dramatically and peak significantly at the edge. Besides, the axial stress and strain are the dominant factors to the von Mises stress distributions on the wafer surface and the wafer deformation, respectively.

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“…Downward pressure was exerted on the specimen, and three reference values (5, 10, and 15 kPa) were selected. [14][15][16][17][18] The polishing speed ranged from 20 to 60 r/min in the simulation, which corresponded with the CMP experiment. The polishing pad moved along the X direction at three different speeds.…”

Section: A Simulation Modelsupporting

confidence: 53%

Research on influences of contact force in chemical mechanical polishing (CMP) process

et al. 2014

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A series of simulations of chemical mechanical polishing (CMP) were conducted to investigate the contact force between abrasive particles and specimens by using the finite element method (FEM). In this paper, a micro-contact model, which only involves the mechanical interactions, was set up to simulate the polishing process by changing the processing parameters, including the downward pressure, abrasive size, and polishing speed. Simulation results show that the contact force becomes larger when the downward pressure increases. In addition, when the downward pressure and abrasive size increase, the fluctuation of the contact force becomes large, whereas it declines with decreases in the polishing speed. In addition, corresponding CMP experiments were done to investigate the material removal rate (MRR) and polished average roughness (Ra) under different simulation conditions. Through the establishment of the contact force properties in the simulation and the MRR and Ra in the CMP experiment, qualitative research has been done on the relationship between the contact force in the simulation and experimental results. Experimental results indicate that the MRR and surface roughness are influenced by the contact force. A high MRR can be obtained by a large contact force and dramatic fluctuations can lead to poor surface-finish quality. The investigation contributes to obtaining higher polishing efficiency and lower surface roughness through optimization of the polishing parameters.

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Stress distribution in chemical mechanical polishing

Cited by 100 publications

References 9 publications

A material removal model for polishing glass–ceramic and aluminum magnesium storage disks

A material removal model for polishing glass–ceramic and aluminum magnesium storage disks

A study of a finite element model for the chemical mechanical polishing process

Research on influences of contact force in chemical mechanical polishing (CMP) process

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