Stress Effects of Deep Centers in Si, New Method to Determine Old Parameter Ξ&lt;sub&gt;μ&lt;/sub&gt;

Li, Ming Fu; Chen, Jianxin; Zhao, Xue Shu; Li, Yan Jin

doi:10.4028/www.scientific.net/msf.10-12.469

MSF

1986

DOI: 10.4028/www.scientific.net/msf.10-12.469

|View full text |Cite

Stress Effects of Deep Centers in Si, New Method to Determine Old Parameter Ξ<sub>μ</sub>

Ming Fu Li¹,

Jianxin Chen

Xue Shu Zhao³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1989

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Some selected topics in high-pressure semiconductor research in China

Qin¹,

Li²

1989

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Stress Effects of Deep Centers in Si, New Method to Determine Old Parameter Ξ<sub>μ</sub>

Cited by 2 publications

References 0 publications

Some selected topics in high-pressure semiconductor research in China

Some selected topics in high-pressure semiconductor research in China

Applicability of the deformation-potential approximation to deep donors in silicon

Contact Info

Product

Resources

About