2014
DOI: 10.7566/jpsj.83.124714
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Stress Effects on nP Yellow Excitons in Cu2O Thin Films Recrystallized Epitaxially in a Sample Gap between Paired MgO Substrates

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Cited by 11 publications
(12 citation statements)
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“…Such small difference of the lattice constants will permit the Cu 2 O (001) plane to grow epitaxially on the MgO (001) plane as reported in Ref. [5]. However, we found a different growth mode in our sample.…”
Section: Resultscontrasting
confidence: 34%
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“…Such small difference of the lattice constants will permit the Cu 2 O (001) plane to grow epitaxially on the MgO (001) plane as reported in Ref. [5]. However, we found a different growth mode in our sample.…”
Section: Resultscontrasting
confidence: 34%
“…As described in our previous work [5], the lattice strain of the Cu 2 O relaxes along the thickness direction with departing from the boundary face between the MgO substrate and is completely released in the thickness region of ∼ 1.3 μm interfaced with the MgO substrate. Since the sample thickness (8.5 μm) is thicker than the strain remaining region and the absorption intensity of the exciting wavelength is weak, the PL of the 1S ortho excitons takes place by the photo-excitation in the whole thickness.…”
Section: Discussionmentioning
confidence: 87%
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“…On the other hand, we have prepared Cu 2 O thin‐crystals recrystallized epitaxially in a small gap between paired MgO substrates . In such thin‐crystals, we have considered that both sample‐thinning and formation of exciton‐trapping potential can be achieved at the same time.…”
Section: Introductionmentioning
confidence: 99%