Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates

Konkar, A.; Madhukar, A.; Chen, P.

doi:10.1063/1.120691

Cited by 111 publications

(64 citation statements)

References 17 publications

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“…This high structural and optical quality of the QD arrays on the QWR template is attributed to the smoothness of the strain field modulation on the dot-diameter and dot-to-dot distance length scales which does not introduce any defects or irregularities in the QD arrays, often occurring when artificial patterning techniques are applied. [11][12][13][14][15][16][17] This is the key advantage of our method for QD ordering based on self-organized anisotropic strain engineering.…”

Section: ϫ2mentioning

confidence: 99%

Self-organized template formation for quantum dot ordering

Nötzel

Mano

Wolter

2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Ordered arrays of quantum dots ͑QDs͒ are created by self-organized anisotropic strain engineering of ͑In,Ga͒As/GaAs quantum wire ͑QWR͒ superlattice ͑SL͒ templates on exactly oriented GaAs ͑100͒ substrates by molecular beam epitaxy ͑MBE͒. The well-defined one-dimensional arrays of ͑In,Ga͒As QDs formed on top of these templates due to local strain recognition are of excellent structural and optical quality up to room temperature. The QD arrays thus allow for fundamental studies and device operation principles based on single-and multiple carrier-and photon-, and coherent quantum interference effects.

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Section: ϫ2mentioning

confidence: 99%

Self-organized template formation for quantum dot ordering

Nötzel

Mano

Wolter

2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…This preferential nucleation enables to control the dot positioning. As the lateral dimensions shrink, it is expected that the additional free surfaces [facets and the original (100)] will offer some strain relief, in contrast with a two-dimensional film [40][41][42]. Fig.…”

Section: Triple-axis X-ray Diffraction Of Corrugated Surfacesmentioning

confidence: 99%

Si Based Nanostructure Growth Subsystem with Atomic Scale Control. Supersonic Molecular Beam Array Cell

Wang¹

1998

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“…Commonly, artificial patterning techniques are applied for the position control of QDs. [3][4][5][6] These techniques, however, often degrade the structural and optical properties of the QDs. To solve this problem, we have introduced a concept for the lateral ordering of QDs based on self-organized anisotropic strain engineering of an ͑In, Ga͒As/ GaAs quantum wire (QWR) superlattice (SL) template in molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates

Mano

Nötzel

Zhou

et al. 2004

Journal of Applied Physics

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. (2005). Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates. Journal of Applied Physics, 97(1), 014304-1/5. [014304]. DOI: 10.1063/1.1823578 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. One-dimensional (In,Ga)As quantum dot (QD) arrays are created on planar singular, vicinal, and shallow mesa-patterned GaAs (100) substrates by self-organized anisotropic strain engineering of an ͑In, Ga͒As/ GaAs quantum wire (QWR) superlattice template in molecular beam epitaxy. On planar singular substrates, highly uniform single QD arrays along ͓0−11͔ are formed. On shallow ͓0−11͔ and [011] stripe-patterned substrates, the generated type-A and -B steps distinctly affect the surface migration processes which are crucial for QWR template development, i.e., strain-gradient-driven In adatom migration along [011] and surface-reconstruction-induced Ga/ In adatom migration along ͓0−11͔. In the presence of both type-A and -B steps on vicinal substrates misoriented towards [101], the direction of adatom migration is altered to rotate the QD arrays. This establishes the relationship between self-organized anisotropic strain and step engineering, which is exploited on shallow zigzag-patterned substrates for the realization of complex QD arrays and networks with well-positioned bends and branches, exhibiting high structural and optical quality.

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Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates

Cited by 111 publications

References 17 publications

Self-organized template formation for quantum dot ordering

Self-organized template formation for quantum dot ordering

Si Based Nanostructure Growth Subsystem with Atomic Scale Control. Supersonic Molecular Beam Array Cell

Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates

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