1984
DOI: 10.1063/1.333142
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Stress evolution and point defect generation during oxidation of silicon

Abstract: The oxidation enhanced diffusion and oxidation stacking faults are assumed to be brought about by a self-interstitial supersaturation in the silicon. In such a case, supersaturation is related to the stresses present in the oxide and in the silicon during oxidation. The detailed analysis of the evolution of these stresses is conducted in relation to time, temperature and the nature of the oxidizing atmosphere, taking into account the viscous relaxation in the oxide. The silicon interstitial concentration durin… Show more

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Cited by 34 publications
(12 citation statements)
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“…It is known from the literature that the growth of SiO 2 on Si wafer produces stress in the vicinity of the Si/SiO 2 interface. 21 The local stress at the Si/SiO 2 interface created during oxidation at 1000°C can be of the order of ϭ10 6 dynes/cm 2 , which is less than the uniaxial stress applied by Wilson and Feher 22 for the perturbation of silicon band structure. In the case of the oxidized silicon grains the oxide is surrounding the silicon symmetrically so no preferable direction is distincted.…”
Section: A Electron Paramagnetic Resonancementioning
confidence: 90%
“…It is known from the literature that the growth of SiO 2 on Si wafer produces stress in the vicinity of the Si/SiO 2 interface. 21 The local stress at the Si/SiO 2 interface created during oxidation at 1000°C can be of the order of ϭ10 6 dynes/cm 2 , which is less than the uniaxial stress applied by Wilson and Feher 22 for the perturbation of silicon band structure. In the case of the oxidized silicon grains the oxide is surrounding the silicon symmetrically so no preferable direction is distincted.…”
Section: A Electron Paramagnetic Resonancementioning
confidence: 90%
“…8(a), we plot the absorbance of the TO 3 modes in oxides grown in different epilayers, We find a shift toward larger frequency, as seen in Fig. 19,26 This is an expected trend since thicker oxides relax through viscous flow.…”
Section: Oxides Grown From Different Epilayersmentioning
confidence: 59%
“…To carry out an accurate comparison between the different samples we have studied the shifts in the position of the vibrational mode TO 3 with respect to pure SiO 2 . 25,26 An unexpected observation is that the oxides grown in the alloy layers are more relaxed than those grown on bulk silicon, irrespective of thickness. 11,12 In Fig.…”
Section: Oxides Grown From Different Epilayersmentioning
confidence: 99%
“…However, the decrease of degree of strain relaxation with oxidation time is against surface roughening and generation of dislocations. Considering the increase of critical thickness with lower Ge content [21] and volume expansion due to the transformation of SiGe to SiO 2 [13,22], we propose that the decrease of the degree of strain relaxation with oxidation time should be due to the lower Ge content and the stress relaxation of oxide layer viscously.…”
Section: Resultsmentioning
confidence: 98%