Stress in thin hollow silicon cylinders grown by the edge-defined film-fed growth technique

The effect of the pressure on the static meniscus shape in the case of tube growth by edge-defined film-fed growth (E.F.G.) method

“…Formula (10) is useful when the contact angle angle a e c , the outer meniscus height z e (r e 1 ) are a priori specified and the pressure p e has to be find such that the outer meniscus shape changes on the interval ((R ge +R gi /2), R ge )]. If for example a i c ¼ 301, and z e (r e 1 ) ¼ 10 À3 m, then the pressure p e has to satisfy the inequalities 75 Papp e p181 Pa. 4. Formula (11) gives the forbidden region for the pressure p e .…”

“…Later, this process was scaled up by Kalejs et al [4] to grow 15 cm diameter silicon tubes, and stress behavior in the grown tube was investigated. It has been realized that numerical investigations are necessary for the improvement of the technology.…”

On the Creation of a Stable Drop‐Like Static Meniscus, Appropriate for the Growth of a Single Crystal Tube with Prior Specified Inner and Outer Radii

“…Later, the heat flow in a tube growth system was analyzed in [10][11][12][13][14][15][16][17][18][19] . The state of the arts at the time 1993-1994, concerning the calculation of the meniscus shape in general in the case of the growth by E.F.G.…”