1987
DOI: 10.1002/pssb.2221440125
|View full text |Cite
|
Sign up to set email alerts
|

Stress Induced Anisotropic Diffusion of Intrinsic Point Defects towards Dislocations in H.C.P. Crystals

Abstract: Dedicated to Prof. Dr. A. SEEGEB on the occasion of his 60th birthdayThe diffusion equations for vacancies and interstitials in the field of straight edge dislocations are numerically solved for a crystal under irradiation and uniaxially stress. The main dislocation systems in hexagonal closed packed metals are considered. The diffusion model takes into account the full lattice and defect symmetry in the equilibrium and migration configurations. A diffusivity tensor for strained h a p . metals is deduced, whic… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

1988
1988
1991
1991

Publication Types

Select...
5

Relationship

3
2

Authors

Journals

citations
Cited by 11 publications
references
References 27 publications
0
0
0
Order By: Relevance