Stress-induced failure of Si3N4 metal-insulator-metal capacitors fabricated by plasma enhanced chemical vapor deposition

Suh, Dongwoo; Kang, JeongWoo

doi:10.1116/1.1463724

Cited by 6 publications

(6 citation statements)

References 8 publications

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“…[9][10][11][12][13][14] Other dielectric materials have also been considered and used as capacitor dielectric, such as SiO 2 , SiO x N y , ZrO 2 , TiO 2 , Al 2 O 3 , CaTiO 3 , Ta 2 O 5 , SrTiO 3 , and HfO 2 , with dielectric constant ranging from 3.8 for SiO 2 to 100 or higher for various high dielectric constant materials. [20][21][22][23][24][25][26][27][28][29][30][31] These materials, however, have mostly higher leakage current and lower dielectric breakdown field than silicon nitride, with breakdown field ranging from 10 MV/cm for a thermal SiO 2 to much lower than 1 MV/cm for some of the higher dielectric constant films. [20][21][22][23][24][25][26][27][28][29][30][31] These high dielectric constant materials are primarily used for MIM capacitors applications in silicon technology, including both digital and analog/mixed signal applications.…”

Section: Introductionmentioning

confidence: 97%

“…[16][17][18][19][20][21][22][23][24] One of the most common methods to deposit MIM capacitor dielectric in the semiconductor industry is the PECVD method. The films deposited using this method typically result in relatively good electrical, physical, chemical, and thermal characteristics, have good film conformality, and can be deposited at relatively low temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Yota

Shen

Ramanathan

2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inPerimeter and area current components in HfO2 and HfO2−x metal-insulator-metal capacitors J. Vac. Sci. Technol. B 31, 01A117 (2013); 10.1116/1.4774104 Properties of stacked SrTiO3/Al2O3 metal-insulator-metal capacitors J. Vac. Sci. Technol. B 31, 01A102 (2013); 10.1116/1.4766183 Metal-insulator-metal capacitors using atomic-layer-deposited Al 2 O 3 ∕ Hf O 2 ∕ Al 2 O 3 sandwiched dielectrics for wireless communications Physical and electrical characterization of HfO 2 metal-insulator-metal capacitors for Si analog circuit applicationsCharacterization was performed on the application of atomic layer deposition (ALD) of hafnium dioxide (HfO 2 ) and aluminum oxide (Al 2 O 3 ), and plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride (Si 3 N 4 ) as metal-insulator-metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The results show that the MIM capacitor with 62 nm of ALD HfO 2 resulted in the highest capacitance density (2.67 fF/lm 2 ), followed by capacitor with 59 nm of ALD Al 2 O 3 (1.55 fF/lm 2 ) and 63 nm of PECVD Si 3 N 4 (0.92 fF/lm 2 ). The breakdown voltage of the PECVD Si 3 N 4 was measured to be 73 V, as compared to 34 V for ALD HfO 2 and 41 V for Al 2 O 3 . The capacitor with Si 3 N 4 dielectric was observed to have lower leakage current than both with Al 2 O 3 and HfO 2 . As the temperature was increased from 25 to 150 C, the breakdown voltage decreased and the leakage current increased for all three films, while the capacitance increased for the Al 2 O 3 and HfO 2 . Additionally, the capacitance of the ALD Al 2 O 3 and HfO 2 films was observed to change, when the applied voltage was varied from À5 to þ5 V, while no significant change was observed on the capacitance of the PECVD Si 3 N 4 . Furhermore, no significant change in capacitance was seen for these silicon nitride, aluminum oxide, and hafnium dioxide films, as the frequency was increased from 1 kHz to 1 MHz. These results show that the ALD films of Al 2 O 3 and HfO 2 have good electrical characteristics and can be used to fabricate high density capacitor. As a result, these ALD Al 2 O 3 and HfO 2 films, in addition to PECVD Si 3 N 4 , are suitable as MIM capacitor dielectric for GaAs HBT technology, depending on the specific electrical characteristics requirements and application of the GaAs devices.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Yota

Shen

Ramanathan

2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Furthermore, stress can also affect the stability and integrity of the metal/electrolyte interface. Excessive stress at the interface can induce interface roughness, dislocations, or interface voids, all of which can act as faulty sites contributing to the leakage current 43,44 …”

Section: Resultsmentioning

confidence: 99%

“…Excessive stress at the interface can induce interface roughness, dislocations, or interface voids, all of which can act as faulty sites contributing to the leakage current. 43,44 F I G U R E 3 (A) Chronoamperometry and fits for the Ru/ 80nm YSZ/Au cell applying 1 V at different temperatures. (B) Arrhenius's plot for the terms i capacitive and i diffusive .…”

Section: Temperature Dependencementioning

confidence: 99%

Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

et al. 2023

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This work aims to demonstrate that chronoamperometry is a valuable tool for determining diffusivities in all‐solid‐state nanometer‐thick cells. The transient current in chronoamperometry of electrochemical cells under constant voltage is described by firstly considering purely capacitive processes, defined by RC circuit equations, and then purely diffusive processes, by Cottrell's equations. The physical meaning of the equations has been amply described in liquid cells with porous electrodes but scarcely in solid‐state cells. We studied Ru/YSZ/Au and Ru/YSZ/Ru parallel nano‐cells at temperatures between 50°C and 170°C and voltages between 0.5 V and 1.5 V, where non‐faradaic processes occur. The calculated diffusive and capacitive contributions at different temperatures obey the Arrhenius law. The activation energy was associated with vacancies, the major carrier during electrical transport. The analysis discusses other parameters, such as capacitance, effective concentration, and leakage current. The experimental diffusivity of YSZ electrolytes was compared with diffusivity values obtained by the statistical moment method.This article is protected by copyright. All rights reserved

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“…These include reducing the thickness of the capacitor dielectric and/or using a capacitor dielectric material with a higher dielectric constant. There have been many high dielectric constant materials evaluated as a MIM capacitor dielectric for semiconductor technologies (12)(13)(14)(15)(16)(17)(18)(19)(20). However, most of them have not been applied to or are not compatible with GaAs technology.…”

Section: Introductionmentioning

confidence: 99%

ALD HfO₂ and Al₂O₃ as MIM Capacitor Dielectric for GaAs HBT Technology

Yota

2013

ECS Trans.

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Hafnium dioxide (HfO2) and aluminum oxide (Al2O3) films have been deposited using atomic layer deposition (ALD) method and have been evaluated and used as metal-insulator-metal (MIM) capacitor dielectric in GaAs hetero-junction bipolar transistor (HBT) technology. The results show that the capacitor with 62 nm of ALD HfO2 resulted in a capacitance density of 2.73 fF/mm2, while that with 59 nm of ALD Al2O3 resulted in a capacitance density of 1.55 fF/mm2. This capacitance density increased, when the temperature was increased from 25 to 150oC. There was no significant change in capacitance density of these ALD films, when the applied voltage was varied from -5 to +5 V and when the frequency was increased from 1 kHz to 1 MHz. The breakdown voltage of the ALD hafnium dioxide and aluminum oxide films was measured to be at 34 V and 41 V, respectively. As the temperature was increased from 25 to 150oC, the breakdown voltage of both films decreased, while the leakage current increased. These results show that both ALD HfO2 and Al2O3 are compatible with, and suitable as MIM capacitor dielectric in GaAs HBT technology and can be adjusted to meet the specific application and requirements of the GaAs devices and designs.

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Stress-induced failure of Si3N4 metal-insulator-metal capacitors fabricated by plasma enhanced chemical vapor deposition

Cited by 6 publications

References 8 publications

Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

ALD HfO₂ and Al₂O₃ as MIM Capacitor Dielectric for GaAs HBT Technology

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Stress-induced failure of Si3N4 metal-insulator-metal capacitors fabricated by plasma enhanced chemical vapor deposition

Cited by 6 publications

References 8 publications

Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

Contact Info

Product

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ALD HfO₂ and Al₂O₃ as MIM Capacitor Dielectric for GaAs HBT Technology