Stress-induced grain boundary fractures in Al–Si interconnects

Hinode, K.; Owada, N.; Nishida, Toshirou; Mukai, K.

doi:10.1116/1.583942

Cited by 118 publications

(19 citation statements)

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“…Accurate calculation of G(t) requires a knowledge of both Fd(x,t) and N(x). Although N(x) was not measured on the test stripes discussed in 43.2, the data available in the literature is consistent with a lognormal distribution of void sizes['51 [16]. Estimation of Fd(x,t), however, is far more problematical since it depends on the precise details of the mechanism of failure.…”

Section: Void Density Effects On Electromigration Failurementioning

confidence: 93%

Electromigration in stress-voided Al alloy conductors

Oates

1993

31st Annual Proceedings Reliability Physics 1993

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A1 alloy metallizations are susceptible to open circuit failure due to electromigration and stress voiding. In general, these mechanisms are not independent: stress voiding can affect electromigration failure. In this paper we characterize electromigration in narrow, stress -voided AlSiCu conductors. The effect of passivation stress is investigated in particular since this parameter has a strong effect on stress -induced void growth. The reliability implications of the presence of stress voids are studied in terms of the form of the failure distribution, and the current density and temperature acceleration parameters. When the passivation stress is high, so that void growth is not saturated prior to electromigration testing, a pronounced degradation of failure time occurs. With a lower passivation stress, and saturated void growth, failure times are largely unaffected by stress voids. Examination of failed stripes shows that in metallizations with high stress passivations pre -existing voids are preferential sites for electromigration, producing slit -like open circuits. It is proposed that mechanical stress gradients generated by stress -induced void growth are important in the processes that produce these open circuits.

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Section: Void Density Effects On Electromigration Failurementioning

confidence: 93%

Electromigration in stress-voided Al alloy conductors

Oates

1993

31st Annual Proceedings Reliability Physics 1993

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“…By Auger Electron Spectroscopy (AES) detecting, it is found that the embrittlement should result from the impurity segregation at the Al boundary, though Na's content was too lower (<1 mass ppm) probably to detect on the intergranular fracture surface. Hinode et al 21) reported that the precipitated Si promotes the nucleation and growth of voids in Al conductor films for LSI use and thus degrades the reliability of performance of LSI. Ogata et al 22) performed the first-principles calculations on the Al AE ¼ 5 tilt boundary with a precipitated Si-atom.…”

Section: Introductionmentioning

confidence: 99%

Effects of Impurities on an Al Grain Boundary

et al. 2003

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The atomic and electronic structures of the Al AE ¼ 9 tilt grain boundary with segregated impurity atoms have been calculated by the firstprinciples pseudopotential method based on the local density functional theory. Effects of impurities of group I (Na), group II (Ca), group IV (Si) and group VI (S) have been examined. For the Na and Ca segregation cases, the impurity-Al interactions seem to have metallic characters. However, the boundary expands substantially and the charge density decreases significantly over the boundary. Thus these impurities should cause weaker intergranular adhesion. For both the Si and S segregation cases, the charge density increases around the impurity atom. The Si atom forms the covalent-metallic character mixing bonds with neighboring Al atoms. Such strong and directional bonds should prevent the rearrangement of atoms under stresses. However, the S atom forms such a strong bond with only one neighbor, differently from the Si case. It can be said that each impurity has various effects on the local atomic and electronic structure of an Al grain boundary according to the nature of each species, which seems to dominate the mechanism of embrittlement.

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“…The resistance increase steps increase in magnitude with increase in aging temperature. [Hinode and Owada 1987;McPherson and Dunn 1987] There seems to be major disagreement in the microelectronic community as to…”

Section: Contact Spikingmentioning

confidence: 99%

The Influence of Temperature on Microelectronic Device Failure Mechanisms. Phase 2

Pecht¹

1993

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Stress-induced grain boundary fractures in Al–Si interconnects

Cited by 118 publications

References 0 publications

Electromigration in stress-voided Al alloy conductors

Electromigration in stress-voided Al alloy conductors

Effects of Impurities on an Al Grain Boundary

The Influence of Temperature on Microelectronic Device Failure Mechanisms. Phase 2

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