2021
DOI: 10.1016/j.jeurceramsoc.2020.12.042
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Stress-mediated solution deposition method to stabilize ferroelectric BiFe1-xCrxO3 perovskite thin films with narrow bandgaps

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Cited by 6 publications
(10 citation statements)
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“…This behavior can be ascribed to the self‐polarization usually found in ferroelectric thin films due to strain gradients generated in the perovskite cell by substrate clamping, which induces a preferred orientation of ferroelectric dipoles and hence a net polarization in the system. [ 31 ] Both short‐circuit current density and open‐circuit voltage considerably increase with poling, reaching maximum values of 90 µA cm −2 and 0.13 V. These data suggest the strong remanence of the ferroelectric dipoles obtained after polarization even at low voltages during the course of the photovoltaic measurement. From the former results, a power output of 11.7 µW cm −2 is calculated (extrapolated to a value of ≈20 µW cm −2 at 1 Sun) which is one order of magnitude higher than that corresponding to the non‐polarized sample.…”
Section: Resultsmentioning
confidence: 84%
“…This behavior can be ascribed to the self‐polarization usually found in ferroelectric thin films due to strain gradients generated in the perovskite cell by substrate clamping, which induces a preferred orientation of ferroelectric dipoles and hence a net polarization in the system. [ 31 ] Both short‐circuit current density and open‐circuit voltage considerably increase with poling, reaching maximum values of 90 µA cm −2 and 0.13 V. These data suggest the strong remanence of the ferroelectric dipoles obtained after polarization even at low voltages during the course of the photovoltaic measurement. From the former results, a power output of 11.7 µW cm −2 is calculated (extrapolated to a value of ≈20 µW cm −2 at 1 Sun) which is one order of magnitude higher than that corresponding to the non‐polarized sample.…”
Section: Resultsmentioning
confidence: 84%
“…[ 46 ] The n‐type ferroelectric semiconductor BFCO is expected to be used in high‐performance devices with efficiencies as high as 8.1% in multilayer devices. [ 4–5,115,173 ] This is the highest PCE that can be achieved by the narrow bandgap inorganic ferroelectric thin film materials, which once again proves the great potential of this material in the field of solar cell applications, and attracts more and more researchers’ attention to the narrow bandgap inorganic ferroelectric materials.…”
Section: Applicationsmentioning
confidence: 90%
“…[61] And different properties interact with each other, and even produce coupling, so it has become an important material for the design and development of multifunctional devices. [105,115,[120][121][122][123] This report mainly introduces the electrical properties, optical properties, and photovoltaic properties of the narrow bandgap inorganic ferroelectric thin film materials.…”
Section: Propertiesmentioning
confidence: 99%
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“…Their study revealed a guide to find perovskite ferroelectric oxide for visible light PV applications. Jimenez et al [227] reported stability of bandgap of BiFe 1−x Cr x O 3 (BFCO), with high Cr concentration over La 0.7 Sr 0.3 MnO 3 (LMSO) coated SrTiO 3 substrate by high-pressure processing (HP) technique. For PV response, the Pt/BFCO/LSMO/STO device structure was employed, with BFCO as an absorber layer.…”
Section: Device Design and Output Power Optimization In Ferroelectric Photovoltaics (Pvc)mentioning
confidence: 99%