Stress Relief as the Driving Force for Self-Assembled Bi Nanolines

Owen, James H. G.; Miki, Kazushi; Koh, HyeJung; Yeom, Han Woong; Bowler, David R.

doi:10.1103/physrevlett.88.226104

Cited by 108 publications

(94 citation statements)

References 15 publications

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“…1(c)]. In this respect these nanowires are different from single dimer rows of Ge or Bi on Si(001) which are sometimes considered as nanowires [10]. However, those wires have no lateral Ge-Ge or Bi-Bi bonds, but only bonds to the underlying substrate.…”

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confidence: 99%

Nanowires and Nanorings at the Atomic Level

et al. 2003

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The step-flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. Alternating deposition of Ge and Si results in the formation of a nanowire superlattice covering the whole surface. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent height is measured in scanning tunneling microscopy images for Si and Ge. Also, different kinds of twodimensional Si=Ge nanostructures like alternating Si and Ge nanorings having a width of 5-10 nm were grown.

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confidence: 99%

Nanowires and Nanorings at the Atomic Level

et al. 2003

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“…DFT has found it to have the lowest energy of any Bi/Si structure calculated, including a monolayer coverage of Bi, 15 but there has been no direct experimental confirmation of the reconstructed core. The pattern of dots seen by STM within the stripe is impossible to reconcile with unreconstructed diamond Si but matches closely that expected from termination of the dangling bonds in the Haiku structure by hydrogen.…”

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confidence: 99%

“…13 However, their width varies along their length, in odd multiples of the Si lattice parameter. Similarly, the Bi/Si͑001͒ nanolines 11,14,15 grow perfectly straight on flat terraces well clear of any step edges, and their length, limited only by the extent of the Si͑001͒ terraces and by surface defects, can also exceed 1 m. But Bi nanolines offer a decisive advantage compared to RENWs as follows: their width is invariant, exactly four Si dimers, or 1.54 nm, without kinks.…”

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One-dimensional Si-in-Si(001) template for single-atom wire growth

Owen

Bianco

Köster

et al. 2010

Applied Physics Letters

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Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We describe a novel silicon-only template enabling the self-organised growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one dimensional, defect-free reconstruction -the Haiku core, here revealed for the first time in details -self-assembled on hydrogenated Si(001) terraces, independent of any step edges. We discuss the potential of this Si-in-Si template as an appealing alternative to vicinal surfaces for nanoscale patterning.

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“…These reconstructions are not metallic, but one of the few examples of atomically perfect 1D systems on Si. [50][51][52][53] A good review on these structures is found in Ref. 54.…”

Section: Introductionmentioning

confidence: 99%

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

Vanpoucke

2014

J. Phys.: Condens. Matter

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Atomic scale nanowires attract enormous interest in a wide range of fields. On the one hand, due to their quasi-one-dimensional nature, they can act as a experimental testbed for exotic physics: Peierls instability, charge density waves, and Luttinger liquid behavior. On the other hand, due to their small size, they are of interest for future device applications in the micro-electronics industry, but also for applications regarding molecular electronics. This versatile nature makes them interesting systems to produce and study, but their size and growth conditions push both experimental production and theoretical modeling to their limits. In this review, modeling of atomic scale nanowires on semiconductor surfaces is discussed focusing on the interplay between theory and experiment. The current state of modeling efforts on Pt-and Au-induced nanowires on Ge (001) is presented, indicating their similarities and differences. Recently discovered nanowire systems (Ir, Co, Sr) on the Ge(001) surface are also touched upon. The importance of scanning tunneling microscopy as a tool for direct comparison of theoretical and experimental data is shown, as is the power of density functional theory as an atomistic simulation approach. It becomes clear that complementary strengths of theoretical and experimental investigations are required for successful modeling of the atomistic nanowires, due to their complexity.

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Stress Relief as the Driving Force for Self-Assembled Bi Nanolines

Cited by 108 publications

References 15 publications

Nanowires and Nanorings at the Atomic Level

Nanowires and Nanorings at the Atomic Level

One-dimensional Si-in-Si(001) template for single-atom wire growth

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

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