1997
DOI: 10.1103/physrevlett.78.4225
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Stress Relief in Reconstruction

Abstract: We report on the first direct measurement of the change of the surface stress in the reconstruction of the Au(111) and the Au(100) surfaces. For both surfaces the reconstruction relaxes the intrinsic tensile stress, by 22% and 5%, respectively. A discussion of the data on the Au(111) surface in the FrenkelKontorova model shows that the energy gain due to the surface stress is not quite large enough to make the reconstructed phase energetically favored without the formation of the secondary herringbone structur… Show more

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Cited by 151 publications
(120 citation statements)
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References 29 publications
(47 reference statements)
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“…We may therefore attribute the conductance jumps in our experiment to an potential induced surface stress that change the atomic configurations of the nanowires. For Au electrodes, a 0.1 V potential causes a surface stress change of Â/0.05 N/m, [40,41], which can change the surface atom packing structure or reconstruction. In the case of atomic-scale metal wires, every atom is a surface atom and the stress built up at negative potentials can trigger a rearrangement in the atomic configuration of the wire.…”
Section: Potential-induced Surface Stressmentioning
confidence: 99%
“…We may therefore attribute the conductance jumps in our experiment to an potential induced surface stress that change the atomic configurations of the nanowires. For Au electrodes, a 0.1 V potential causes a surface stress change of Â/0.05 N/m, [40,41], which can change the surface atom packing structure or reconstruction. In the case of atomic-scale metal wires, every atom is a surface atom and the stress built up at negative potentials can trigger a rearrangement in the atomic configuration of the wire.…”
Section: Potential-induced Surface Stressmentioning
confidence: 99%
“…In spite of the fundamental issues related to stress during heteroepitaxial growth, experimental determinations of film stress with submonolayer sensitivity are rare. [4][5][6] In this paper we present direct experimental evidence for the intimate relation between film stress and structural transitions for the growth of Ni on W͑110͒ from the combination of low-energy electron diffraction ͑LEED͒, scanning tunneling microscopy ͑STM͒, and stress measurements. For coverages below 0.5 ML we measure considerable compressive film stress in the pseudomorphic Ni film while, based on lattice mismatch arguments, tensile stress is expected.…”
Section: Max-planck-institut Für Mikrostrukturphysik Weinberg 2 D-0mentioning
confidence: 99%
“…Recently, even the tunnel junction of a STM was used to measure surface stress effects in an electrochemical cell. 6 All these experiments are performed in a way to ensure film growth or adsorption only at the front surface of a thin substrate, whereas the backside remains unaffected. We measure film stress during growth with an optical bending beam technique, which we described previously.…”
Section: Max-planck-institut Für Mikrostrukturphysik Weinberg 2 D-0mentioning
confidence: 99%
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“…The Ackland-Jones bond-angle method allows us to determine the type of the crystalline structure of each atom. The X-ray diffraction technique is a powerful method widely used for the structural characterisation of real materials [23]. This technique was also been employed for interpreting the data obtained from simulation, in particular to establish the arrangement of atoms or to determine the lattice constant [24].…”
Section: Simulation Methodsmentioning
confidence: 99%