Stress simulation of 6-inch SiC single crystal

Meng, Dalei; Wang, Yingmin; Han, Xue; Ying, Liying; Wang, Zenghua

doi:10.1016/j.vacuum.2023.112081

Cited by 6 publications

(5 citation statements)

References 14 publications

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“…11 Therefore, heat convection is ignored, and eq 2 is simplified to eq 3. (14) In this equation, λ crucible is about hundreds of times λ gas , while δ crucible + δ gas is constant; therefore, the total k is decreased as the gas layer increases and the chamber has higher temperature. It also shows the gas layer shows good insulation performance, and will be effective in decreasing the heat loss in furnace.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…However, numerical simulations could overcome the experimental hurdles and guide the design and optimization of the AlN crystal growth process via PVT. In the development and optimization of PVT crystal growth process, numerous simulation tools have been proved effective, such as such as ANSYS, 13 COMSOL, 14 FEMAG, 15 and VR. 16 Since the temperature distribution in the crystal growth furnace consequences in thermal gradient and thermal stress experienced by the material, their impacts on the crystallization process and the ultimate growth rate and crystal quality is significant.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Structural Design Optimization of Physical Vapor Transport Furnace for Aluminum Nitride Crystal Growth via Modeling and Simulation

Chen,

Ding,

et al. 2023

Ind. Eng. Chem. Res.

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The growth of high-quality aluminum nitride (AlN) crystals heavily relies on precision of high temperatures that the thermal gradient impacts their growth rate, size, and quality, especially when the physical vapor transport (PVT) method is used. In this paper, we proposed innovative mechanical and design improvements to the crystal growing furnace by optimizing the shape and height of the blind hole to achieve a uniform or better thermal distribution. We presented simulation results of the thermal field in the crystal growing device using COMSOL and found that the proposed modification effectively reduces the thermal gradient and minimizes the thermal stress. Additionally, the new structure promotes organized natural convection, which benefits species transport in the furnace.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structural Design Optimization of Physical Vapor Transport Furnace for Aluminum Nitride Crystal Growth via Modeling and Simulation

Chen,

Ding,

et al. 2023

Ind. Eng. Chem. Res.

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“…Finally, the crystal growth of 50 h and the subsequent cooling process were simulated, and the corresponding distributions of the thermal field, stress field, and dislocation were also obtained. Details of growth procedures and simulations can be found in our previously reported work [23,24]. In this study, four groups of simulations were conducted, as shown in Table 1, to investigate the effects of cooling rate (comparing simulations A and B), stress boundary condition (comparing simulations A and C), and CTE of the graphite crucible (comparing simulations C and D) on the BPD density.…”

Section: Methodsmentioning

confidence: 99%

The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density

Sun,

Shang,

Lei

et al. 2024

Materials

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The basal plane dislocation (BPD) density is one of the most important defects affecting the application of SiC wafers. In this study, numerical simulations and corresponding experiments were conducted to investigate the influence of cooling processes, seed-bonding methods, and graphite crucible materials on the BPD density in an 8-inch N-type 4H-SiC single crystal grown by the physical vapor transport (PVT) method. The results showed that the BPD density could be effectively reduced by increasing the cooling rate, optimizing the seed-bonding method, and adopting a graphite crucible with a similar coefficient of thermal expansion as the SiC single crystal. The BPD density in the experiments showed that a high cooling rate reduced the BPD density from 4689 cm−2 to 2925 cm−2; optimization of the seed-bonding method decreased the BPD density to 1560 cm−2. The BPD density was further reduced to 704 cm−2 through the adoption of a graphite crucible with a smaller thermal expansion coefficient.

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“…Despite extensive research on SiC single crystals, , investigations into the evolution of twinning structures within these materials are still scarce. In the field of material science, the crystal twinning structure is a common subject of analysis.…”

Section: Introductionmentioning

confidence: 99%

Exploring Defect Dynamics and Twin-Layer Interactions in SiC Crystals through Molecular Simulations

Liu,

Gao,

Huang

et al. 2024

J. Phys. Chem. B

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Silicon carbide (SiC), a third-generation semiconductor material, is pivotal for applications in new energy vehicles, aerospace, and high-speed electronics, owing to its superior properties. This study delves into the twin-induced growth behaviors of SiC crystals through molecular dynamics simulations at temperatures ranging from 2700 to 3200 K. It focuses on the wurtzite and zinc blende SiC structures, revealing dynamic defect behavior during growth, including an initial rise and subsequent decrease in vacancies, with particular emphasis on prevalent defects within zinc blende twin layers. A significant finding is the direct correlation between temperature and growth rates across different SiC structures, highlighting temperature control as essential for optimizing crystal quality. Furthermore, this work contributes to the analysis of the interactions of twin layers and their impact on structural stability and defect formation in SiC crystals. The insights gained here have substantial implications for the semiconductor industry, potentially enhancing device performance by better controlling growth conditions and defect management in SiC-based electronic and optoelectronic devices.

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Stress simulation of 6-inch SiC single crystal

Cited by 6 publications

References 14 publications

Structural Design Optimization of Physical Vapor Transport Furnace for Aluminum Nitride Crystal Growth via Modeling and Simulation

Structural Design Optimization of Physical Vapor Transport Furnace for Aluminum Nitride Crystal Growth via Modeling and Simulation

The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density

Exploring Defect Dynamics and Twin-Layer Interactions in SiC Crystals through Molecular Simulations

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