Stresses and deformation processes in thin films on substrates

Doerner, M.; Nix, William D.

doi:10.1080/10408438808243734

Cited by 583 publications

(310 citation statements)

References 107 publications

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“…Curvature is directly proportional to the product of the film stress and film thickness (σ f h f ), both of which vary, in general, during growth. Equation 1 can be derived by balancing the forces and bending moments in the film with those in the substrate, and assuming the film is much thinner then the substrate [18]. We also simultaneously obtain information on the surface roughness and film thickness during deposition by monitoring the intensity of one of the reflected laser beams, similar to the method described in Ref.…”

Section: Methodsmentioning

confidence: 99%

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Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics

Han

Crawford

Shul

et al. 1999

MRS Internet j. nitride semicond. res.

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The grown-in tensile strain, due to a lattice mismatch between AlGaN and GaN, is responsible for the observed cracking that seriously limits the feasibility of nitride-based ultraviolet (UV) emitters. We report in-situ monitoring of strain/stress during MOCVD of AlGaN based on a wafer-curvature measurement technique. The strain/stress measurement confirms the presence of tensile strain during growth of AlGaN pseudomorphically on a thick GaN layer. Further growth leads to the onset of stress relief through crack generation. We find that the growth of AlGaN directly on low-temperature (LT) GaN or AlN buffer layers results in a reduced and possibly controllable strain.

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Section: Methodsmentioning

confidence: 99%

“…The relation between film stress (σ f ), and substrate curvature (κ), is given by Stoney's equation [18],…”

Section: Methodsmentioning

confidence: 99%

Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics

Han

Crawford

Shul

et al. 1999

MRS Internet j. nitride semicond. res.

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“…From the data points obtained during cooling the coefficient of thermal expansion of CrN can be determined. 16 …”

Section: ͑2͒mentioning

confidence: 99%

Stress gradients in CrN coatings

Janssen

Tichelaar

Visser

2006

Journal of Applied Physics

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Stress in hard films is the net sum of tensile stress generated at the grain boundaries, compressive stress due to ion peening, and thermal stress due to the difference in thermal expansion of the coating and substrate. The tensile part due to grain boundaries is thickness dependent. The other two contributions are not thickness dependent. Summation of the three components leads to a stress gradient in the coating. In the present paper it is demonstrated that adding the three contributions mentioned above yields a good description of the observed dependence of stress on thickness in CrN coatings.

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“…The generated stress increases with decreasing temperature due to the decreasing atom mobility. For T s < 300 °C the presence of grain boundaries parallel to the film surface and the refinement of the grain structure probably allows a stress relaxation via grain boundary diffusion [31]. However, a detailed investigation of the stress behaviour must be conducted to confirm this suggestion.…”

Section: Discussionmentioning

confidence: 99%

“…Such a relaxation mechanism could be associated with the change of the grain structure. In the columnar regime only the film boundaries serve as sinks and sources for vacancies [31]. The generated stress increases with decreasing temperature due to the decreasing atom mobility.…”

Section: Discussionmentioning

confidence: 99%

Effect of substrate temperature on the microstructure of thin niobium films

1994

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Niobium films with constant thickness have been deposited on sapphire (1120) by electron-beam evaporation at different substrate temperatures ( 150 °C ~< T s ~< 750 °C). The samples were characterized by X-ray diffraction and resistivity measurements. X-ray reflectivity shows that all films are covered with an oxide layer of about 20 A in ambient atmosphere. The (110) texture at high Ts decreases towards lower Ts, accompanied by an increasing surface roughness. Below T s = 350 °C the grain size in the growth direction becomes smaller than the film thickness and a relaxation of intrinsic stress is observed. A transition from a columnar growth structure to a fine grained microstructure is inferred. The change of the microstructure with T s is probably due to the temperature dependent grain boundary mobility during the deposition process.

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Stresses and deformation processes in thin films on substrates

Cited by 583 publications

References 107 publications

Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics

Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics

Stress gradients in CrN coatings

Effect of substrate temperature on the microstructure of thin niobium films

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