Stretchable Light‐Emitting Diodes with Organometal‐Halide‐Perovskite–Polymer Composite Emitters

Bade, Sri Ganesh R.; Shan, Xin; Hoang, Phong Tran; Li, Junqiang; Geske, Thomas; Cai, Le; Pei, Qibing; Wang, Chuan; Yu, Zhibin

doi:10.1002/adma.201607053

Cited by 160 publications

(147 citation statements)

References 34 publications

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“…For bendable display and curved lighting applications with PeLEDs, it is highly desirable to realize flexible device architecture on plastic substrates. However, the efficiency values of flexible PeLEDs reported so far lag behind those of the counterparts on rigid glass substrates . To validate the effectiveness of the method in this work, flexible PeLEDs using the CsPbBr 3 +PEG+PEABr perovskite film were further fabricated on polyethylene terephthalate (PET) substrates, in which Ag nanowires (AgNWs) were used as the transparent electrode to replace the conventional ITO .…”

Section: Resultsmentioning

confidence: 99%

Efficient CsPbBr₃ Perovskite Light‐Emitting Diodes Enabled by Synergetic Morphology Control

Cheng

Huang

Shen

et al. 2018

Advanced Optical Materials

133

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The development of solution‐processed inorganic metal halide perovskite light‐emitting diodes (PeLEDs) is currently hindered by low emission efficiency due to morphological defects and severe non‐radiative recombination in all‐inorganic perovskite emitters. Herein, bright PeLEDs are demonstrated by synergetic morphology control over cesium lead bromide (CsPbBr3) perovskite films with the combination of two additives. The phenethylammonium bromide additive enables the formation of mixed‐dimensional CsPbBr3 perovskites featuring the reduced grain size (<15 nm) and efficient energy funneling, while the dielectric polyethyleneglycol additive promotes the formation of highly compact and pinhole‐free perovskite films with defect passivation at grain boundaries. Consequently, green PeLEDs achieve a current efficiency of 37.14 cd A−1 and an external quantum efficiency of 13.14% with the maximum brightness up to 45 990 cd m−2 and high color purity. Furthermore, this method can be effectively extended to realize flexible PeLEDs on plastic substrates with a high efficiency of 31.0 cd A−1.

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Section: Resultsmentioning

confidence: 99%

Efficient CsPbBr₃ Perovskite Light‐Emitting Diodes Enabled by Synergetic Morphology Control

Cheng

Huang

Shen

et al. 2018

Advanced Optical Materials

133

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“…Meanwhile, some researchers have also been exploring different application sectors, such as MHP‐based TFTs . In fact, MHPs have great potential as ideal semiconductor materials for next‐generation high‐performance TFTs in several respects: 1) the intrinsic high charge‐carrier mobilities (theoretical calculated values: μ e = 3100–1500 cm 2 V −1 s −1 and μ h = 500–800 cm 2 V −1 s −1 for the lead‐based perovskites and μ e = 2700‐1300 cm 2 V −1 s −1 and μ h = 3100–1400 cm 2 V −1 s −1 for the tin‐based ones at charge carrier concentrations of ≈10 16 cm −3 ) and tunable ambipolar features make MHPs good candidates for high‐speed integrated circuits; 2) the low‐temperature processability and flexibility make them suitable for flexible and even stretchable or wearable electronics; 3) the high absorption coefficient, photon–electron conversion yield, photoluminescence quantum yield, tunable bandgap, and electroluminescence enable multifunctional TFT integration, such as phototransistors and light‐emitting TFTs …”

Section: Solution‐processed Metal Halide Perovskite Transistorsmentioning

confidence: 99%

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Zhu

Shin

Liu

et al. 2019

Adv Funct Materials

165

130

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Studies on printable semiconductors and technologies have increased rapidly over recent decades, pioneering novel applications in many fields, such as energy, sensing, logic circuits, and information displays. The newest display technologies are already turning to metal oxide semiconductors, i.e., indium gallium zinc oxide, for the improvements needed to drive active matrix organic light-emitting diodes. Convenience and portability will be realized with flexible and wearable displays in the future. This report summarizes recent progress on the development of solution-processed thin film transistors, especially those deposited at low temperatures for next-generation flexible smart displays. The first part provides an overview on the history and current status of displays. Then, recent advances in state-of-the-art solution-processed transistors based on different semiconductors are presented, including metal oxides, organic materials, perovskites, and carbon nanotubes. Finally, conclusions are drawn and the remaining challenges and future perspectives are discussed. a large common cathode (opaque metal). This means that the light emission goes through the backplane and the TFT arrays are able to block the light, resulting in the reduced emission fill factor of the display. This mode is also called bottom emission. One effective way to avoid the light obstruction from TFTs in the backplane is to use top-emitting OLEDs, which have a transparent cathode. [2] In 2004, Pennsylvania State University demonstrated the first flexible phosphorescent AMOLED display with hydrogenated amorphous silicon on a 4 in. polyimide (PI) substrate. [7] One year later, a 48 × 48 organic pentacene TFT-driven AMOLED display on a polyethylene terephthalate (PET) substrate was reported by the same group. [8] In 2005, by employing a top-emission structure, researchers at Sony Corp. demonstrated the first full-color imaging on a flexible AMOLED with a pixel resolution of 80 ppi. [9] In 2013, Samsung Electronics showed curved OLED TVs for the first time. Two years later, the same company unveiled a smartphone with a curved edge display (Galaxy S6 Edge), which used touch sensors to improve the user interface and device design. Most recently, LG Display succeeded in developing the world's first large-size 77 in. transparent and flexible OLED display, which could be rolled up to a radius of 80 mm. [10] The ideal flexible AMOLED backplane should be robust, rollable/bendable, capable of complementary metal oxide semiconductor (CMOS) operation, and should lend itself to low-cost manufacturing. To advance toward next-generation flexible AMOLED displays, two key technological goals should be satisfied during fabrication. One is to develop TFT backplanes with good uniformity, stability, and electrical performance. Amorphous silicon (a-Si) TFTs are well known for their uniform electrical characteristics (µ FE < 1 cm 2 V −1 s −1 and I on /I off > 10 6 ) and have achieved great success in flat-panel LCD displays. However, the relatively low µ FE and the lig...

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“…Owing to the inherent properties of halide perovskites such as low trap‐state density, long diffusion length, and large linear absorption coefficient above the band edge; halide perovskites are deemed to be the promising light harvesting materials . Meanwhile, the tunable emission wavelength in the whole visible spectrum range and high luminescence quantum yield make these metal‐halide perovskites also promising for applications in light emitting diodes (LEDs) and lasers . Specifically speaking, amplified spontaneous emission (ASE) has been demonstrated in metal‐halide perovskite thin films.…”

Section: Introductionmentioning

confidence: 99%

Two‐Photon Optical Properties in Individual Organic–Inorganic Perovskite Microplates

Wei

et al. 2017

Advanced Optical Materials

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yield [15][16][17] make these metal-halide perovskites also promising for applications in light emitting diodes (LEDs) and lasers. [18][19][20][21][22][23] Specifically speaking, amplified spontaneous emission (ASE) has been demonstrated in metal-halide perovskite thin films. Multiphoton pumped upconverted photoluminescence (PL) and coherent light emission have been achieved with perovskite single crystals and nanocrystals (NCs). [24][25][26][27][28][29][30][31][32][33][34] Metal-halide perovskite lasing has been demonstrated with various microcavity structures. [35][36][37][38] For use as coherent light source, the lasing threshold obtained is also highly dependent on the optical cavity, which is formed by the close loop light reflection from the nanostructure surfaces that becomes a standing wave cavity resonator. The regular shape of the perovskite microstructures with various sizes differs in various optical confinement abilities, which suggests that lasing in perovskite microstructures possesses size-dependent behavior. [39][40][41][42] Hence, a clearer understanding of the size-dependent coherent light emission behavior is crucial for developing metal-halide perovskite on chip nanolasers. Furthermore, the photogenerated species (especially in CH 3 NH 3 PbBr 3 (MAPbBr 3 )) and their contribution to the lasing performance in these perovskites have not been fully revealed. [43] The exciton binding energy in 3D MAPbBr 3 has been estimated with various techniques. However, the reported values are highly controversial and covered a wide range from 25 to 150 meV. [44][45][46][47][48] Unlike the confirmed excitonic emission in MAPbBr 3 NCs, due to the extremely large exciton binding energy (≈375 meV), [49] it Metal-halide perovskites are recently extensively investigated as light absorbing material in solar cells. The outstanding optoelectronic properties and tunable light emission of the perovskites also make them promising candidates for light emitting diodes and lasers. However, understanding the relevant mechanisms and processes of the dependence of perovskite light emission on temperature and crystal size is still challenging. Herein, the CH 3 NH 3 PbBr 3 monocrystals of different sizes are uniformly excited by two-photon absorption at 800 nm (100 fs, 1 KHz). In contrast to the reported relative large exciton binding energy (≈76 meV) and spectrum clearly resolved excitonic absorption, the light emission origin in CH 3 NH 3 PbBr 3 microcrystals at room temperature is unambiguously determined to be dominated by free electron-hole bimolecular recombination. The coherent light emission threshold of CH 3 NH 3 PbBr 3 microcrystal increases with temperature, which is closely related to the temperature induced transition from exciton gas to free charge carriers. In addition, the coherent light emission threshold is found to decrease with the microcrystal size, which could be well interpreted by the interaction between the optical confinement, defect density, and cavity quantum electrodynamics effect. These results pre...

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Stretchable Light‐Emitting Diodes with Organometal‐Halide‐Perovskite–Polymer Composite Emitters

Cited by 160 publications

References 34 publications

Efficient CsPbBr₃ Perovskite Light‐Emitting Diodes Enabled by Synergetic Morphology Control

Efficient CsPbBr₃ Perovskite Light‐Emitting Diodes Enabled by Synergetic Morphology Control

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Two‐Photon Optical Properties in Individual Organic–Inorganic Perovskite Microplates

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Stretchable Light‐Emitting Diodes with Organometal‐Halide‐Perovskite–Polymer Composite Emitters

Cited by 160 publications

References 34 publications

Efficient CsPbBr3 Perovskite Light‐Emitting Diodes Enabled by Synergetic Morphology Control

Efficient CsPbBr3 Perovskite Light‐Emitting Diodes Enabled by Synergetic Morphology Control

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Two‐Photon Optical Properties in Individual Organic–Inorganic Perovskite Microplates

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Efficient CsPbBr₃ Perovskite Light‐Emitting Diodes Enabled by Synergetic Morphology Control

Efficient CsPbBr₃ Perovskite Light‐Emitting Diodes Enabled by Synergetic Morphology Control