Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon

Kakalios, J.; Street, R. A.; Jackson, Warren B.

doi:10.1103/physrevlett.59.1037

Cited by 612 publications

(267 citation statements)

References 13 publications

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“…33 It is suggested that these relaxations can be ascribed to Arrhenius type behavior with a distribution of diffusion-site energies. 34 Detailed electronic structure calculations are still necessary to clarify the role of hydroxyls for a particular oxide.…”

Section: Discussionmentioning

confidence: 99%

Experimental and theoretical studies of hydroxyl-induced magnetism in TiO nanoclusters

et al. 2012

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A main challenge in understanding the defect ferromagnetism in dilute magnetic oxides is the direct experimental verification of the presence of a particular kind of defect and distinguishing its magnetic contributions from other defects. The magnetic effect of hydroxyls on TiO nanoclusters has been studied by measuring the evolution of the magnetic moment as a function of moisture exposure time, which increases the hydroxyl concentration. Our combined experiment and density-functional theory (DFT) calculations show that as dissociative water adsorption transforms oxygen vacancies into hydroxyls, the magnetic moment shows a significant increase. DFT calculations show that the magnetic moment created by hydroxyls arises from 3d orbitals of neighboring Ti sites predominantly from the top and second monolayers. The two nonequivalent hydroxyls contribute differently to the magnetic moment, which decreases as the separation of hydroxyls increases. This work illustrates the essential interplay among defect structure, local structural relaxation, charge redistribution, and magnetism. The microscopic differentiation and clarification of the specific roles of each kind of intrinsic defect is critical for the future applications of dilute magnetic oxides in spintronic or other multifunctional materials.

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Section: Discussionmentioning

confidence: 99%

Experimental and theoretical studies of hydroxyl-induced magnetism in TiO nanoclusters

et al. 2012

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“…For bulk a-Si:H material, defect reduction following stretched exponentials was explained in the past as arising either from dispersive (i.e. time dependent) hydrogen diffusion [3], or from retrapping included hydrogen motion [4]. For the a-Si:H(i) / c-Si interface, based on the latter interpretation, it has been argued that the annealing induced passivation may originate from a transfer of hydrogen from a higher hydride state in the a-Si:H film (close to the interface) to a monohydride cSi surface state [5].…”

Section: Intrinsic A-si:h Film Passivationmentioning

confidence: 99%

Towards a Better Understanding of Silicon Heterojunction Solar Cells

DeWolf¹,

Damon-Lacoste²,

Fesquet³

et al. 2009

Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials

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“…In the present study we assume γ = 1/2. The stretched exponential function describes relaxation phenomena in random systems [29,30] and can be attributed to a dispersive transport of mobile defects in the glass [31]. The dispersive transport is characterized by the infinite average time between subsequent hops.…”

Section: B Stretched Exponential Covariancementioning

confidence: 99%

Stochastic processes with finite correlation time: Modeling and application to the generalized Langevin equation

Srokowski

2001

Phys. Rev. E

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Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon

Cited by 612 publications

References 13 publications

Experimental and theoretical studies of hydroxyl-induced magnetism in TiO nanoclusters

Experimental and theoretical studies of hydroxyl-induced magnetism in TiO nanoclusters

Towards a Better Understanding of Silicon Heterojunction Solar Cells

Stochastic processes with finite correlation time: Modeling and application to the generalized Langevin equation

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