Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

Ko, Suck-Min; Kwack, Ho-Sang; Park, Chung-Hyun; Yoo, Yang Seok; Kwon, Soon-Duck; Kim, Hee Jin; Yoon, Euijoon; Dang, Le Si; Cho, Yong-Hoon

doi:10.1063/1.4833917

Cited by 4 publications

(2 citation statements)

References 17 publications

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“…34 (B) The valence band offset can also be enlarged by incorporating higher amounts of indium into thinner QWs, 35 thus reducing the significance of CHC states.…”

Section: Discussionmentioning

confidence: 99%

Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells

Nippert

Nirschl

Schulz

et al. 2016

Journal of Applied Physics

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We investigate industrial-grade InGaN/GaN quantum wells (QWs) emitting in the green spectral region under high, resonant pumping conditions. Consequently, an ubiquitous high energy luminescence is observed that we assign to a polarization field Confined Hole Continuum (CHC). Our finding is supported by a unique combination of experimental techniques, including transmission electron microscopy, (time-resolved) photoluminescence under various excitation conditions, and electroluminescence, which confirm an extended out-of-plane localization of the CHC-states. The larger width of this localization volume surpasses the QW thickness, yielding enhanced nonradiative losses due to point defects and interfaces, whereas the energetic proximity to the bulk valence band states promotes carrier leakage. Published by AIP Publishing.

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“…34 (B) The valence band offset can also be enlarged by incorporating higher amounts of indium into thinner QWs, 35 thus reducing the significance of CHC states.…”

Section: Discussionmentioning

confidence: 99%

Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells

Nippert

Nirschl

Schulz

et al. 2016

Journal of Applied Physics

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“…Specifically, transition from redshift to blueshift of peak energy occurs at 260 K on SCPSS, which is higher than 220 K on CSS. It reveals that the localized carriers in MQWs on SCPSS need higher transition temperature, i.e., higher thermal energy to transfer to higher energy states, which is caused by a stronger carrier localization effect of MQWs on SCPSS. − Compared to MQWs on CSS, the higher transition temperature and the slower rate of blueshift with temperature on SCPSS, result in the crossover of peak energies at 270 K, and finally slightly lower peak energy at 300 K (RT). Previous study shows that the high crystal quality of GaN substrate leads to narrow and deep potential valleys accompanied by the enhanced localization in MQWs .…”

Section: Resultsmentioning

confidence: 99%

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask

Zhang

et al. 2016

ACS Appl. Mater. Interfaces

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The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long unsolved problem, which hinders further applications of defect-sensitive GaN-based devices. Multiple-modulation of epitaxial lateral overgrowth (ELOG) is used to achieve high-quality GaN template on a novel serpentine channel patterned sapphire substrate (SCPSS). The dislocation blocking brought by the serpentine channel patterned mask, coupled with repeated dislocation bending, can reduce the dislocation density to a yet-to-be-optimized level of ∼2 × 10(5) to 2 × 10(6) cm(-2). About 80% area utilization rate of GaN with low TDD and stress relaxation is obtained. The periodical variations of dislocation density, optical properties and residual stress in GaN-based epilayers on SCPSS are analyzed. The quantum efficiency of InGaN/GaN multiple quantum wells (MQWs) on it can be increased by 52% compared with the conventional sapphire substrate. The reduced nonradiative recombination centers, the enhanced carrier localization, and the suppressed quantum confined Stark effect, are the main determinants of improved luminous performance in MQWs on SCPSS. This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolar/nonpolar GaN and GaAs with high quality.

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Influence of interface structure on photoelectric properties of InGaN light-emitting diodes

Dang

et al. 2018

Optik

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Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

Cited by 4 publications

References 17 publications

Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells

Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask

Influence of interface structure on photoelectric properties of InGaN light-emitting diodes

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