Strong compensation of n-type Ge via formation of donor–vacancy complexes

Coutinho, J.; Janke, C.; Carvalho, Alexandra; Torres, V.J.B.; Öberg, Sven; Jones, R.; Briddon, P.R.

doi:10.1016/j.physb.2007.08.141

Cited by 10 publications

(5 citation statements)

References 23 publications

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“…6,17 The primary cause of this low active dopant fraction (i.e., carrier to donor concentration ratio) is the ready formation of vacancies and negatively charged donor-vacancy (D-V) clusters that compensate the donor charge. [18][19][20] To manage the vacancies and D-V pairs that cause low donor activation, we co-dope epitaxial Ge with phosphorus (P) and fluorine (F). The role of F is to selectively bind to and passivate vacancies that would otherwise bind to P donors and deactivate them.…”

Section: Introductionmentioning

confidence: 99%

High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

Pastor

Gandhi

Monmeyran

et al. 2018

Journal of Applied Physics

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Section: Introductionmentioning

confidence: 99%

High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

Pastor

Gandhi

Monmeyran

et al. 2018

Journal of Applied Physics

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“…In addition, vacancies (V) were shown to carry two negative elementary charges in n-type Ge, 55 and to interact with dopants forming mobile dopant-V complexes. [56][57][58][59][60][61][62][63] Consequently, one could expect the formation of uncharged mobile TeV 0 pairs in our case. In addition, the Te atoms forming GeTe clusters are also expected to be neutral.…”

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confidence: 68%

Te homogeneous precipitation in Ge dislocation loop vicinity

Portavoce

Texier

Bertoglio

et al. 2016

Applied Physics Letters

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International audienceHigh resolution microscopies were used to study the interactions of Te atoms with Ge dislocation loops, after a standard n-type doping process in Ge. Te atoms neither segregate nor precipitate on dislocation loops, but form Te-Ge clusters at the same depth as dislocation loops, in contradiction with usual dopant behavior and thermodynamic expectations. Atomistic kinetic Monte Carlo simulations show that Te atoms are repulsed from dislocation loops due to elastic interactions, promoting homogeneous Te-Ge nucleation between dislocation loops. This phenomenon is enhanced by coulombic interactions between activated Te2+ or Te1+ ions. Published by AIP Publishing

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“…To illustrate the advantage of the HSE06 hybrid functional over the semilocal PBE one, we performed comparative calculations of these values for actual donor-vacancy complexes in Ge as a case study. In particular, it is well known that complexes of shallow donors (P and As) with vacancies are deep acceptors or donors depending on the Fermi level position, and play an important role in the deactivation of shallow donors in germanium [29,30].…”

Section: Performance Of Hse06 Functional For Calculation Of Electroni...mentioning

confidence: 99%

Hybrid density functional theory simulation of sodium impurity and impurity–vacancy defect complexes in germanium: perspectives of defect engineering for activation of shallow donors

Petrenko,

Bryksa,

Dyka

2024

J. Phys. D: Appl. Phys.

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At present Ge as high-mobility material is considered as possible replacement of Si in microelectronics. The main obstacle on this way is the large vacancy concentration obtained after the implantation of shallow donors. This prevents the formation of n+ regions and has a negative impact on device performance. One of the ways to eliminate the detrimental effect of such defects is the codoping approach. In this study the behaviour of Na impurity in germanium together with formation of defect complexes with vacancies, divacancies and shallow donors (P and As) were investigated using hybrid DFT calculations. The site preference, diffusion barriers, charge states, binding energies of various complexes as well as activation of donor-vacancy complexes with both F and Na codoping were investigated. For this purpose two extreme cases were considered. Firstly, we calculate concentrations of substitutional and interstitial Na together with monovacancies in the case of quasiequilibrium conditions realized for doping from melt. Another extreme case is Na codoping during ion implantation. Our calculations show that Na passivates vacancies, divacancies and donor-vacancy complexes (E-centers) with the large energy gain which prevents the rapid donor diffusion similar to the case of doping with ﬂuorine. We shown that passivation of E-centers with both F and Na impurities leads to the back transformation of such complexes into the shallow donors. This means that codoping with Na may neutralize the harmful effect of vacancies and is perspective for defect engineering.

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Strong compensation of n-type Ge via formation of donor–vacancy complexes

Cited by 10 publications

References 23 publications

High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

Te homogeneous precipitation in Ge dislocation loop vicinity

Hybrid density functional theory simulation of sodium impurity and impurity–vacancy defect complexes in germanium: perspectives of defect engineering for activation of shallow donors

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