We present numerical and analytical results for the lifetime of emitters in close proximity to graphene sheets. Specifically, we analyze the contributions from different physical channels that participate in the decay processes. Our results demonstrate that measuring the emitters' decay rates provides an efficient route for sensing graphene's optoelectronic properties, notably the existence and size of a potential band gap in its electronic band structure. DOI: 10.1103/PhysRevB.93.081404 Driven by its successful isolation, graphene has not stopped fascinating the research community. Although this allotropic form of carbon had been theoretically investigated for decades, experimental access to graphene has offered new perspectives as well as novel directions for fundamental research and technological applications [1,2]. Graphene's exotic properties [3] have led to the investigation of a wide range of phenomena such as ballistic transport [4], the quantum Hall effect [1,5], and thermal [6] as well as electrical conductivity [7,8]. Developing a detailed understanding, followed by appropriate engineering, of these properties lies at the heart of future graphene-based technologies. For this, an accurate determination of graphene's properties in realistic experimental settings and the detailed validation of various theoretical models (cf. Ref. [7,[9][10][11]) is indispensable. Promising designs where the semimetal will play an important role aim at combining condensed matter with atomic systems. Such hybrid devices are geared towards reaping the best of the two worlds for advanced high-performance devices.In this work, we demonstrate how the high degree of control and accuracy available in quantum systems like cold atoms and Si and NV centers in nanodiamonds can be employed for detailed investigations of graphene's optoelectronic properties [12][13][14][15]. Specifically, we focus on modifications in the lifetimes of emitters held in close proximity to graphene layers and show that these allow for direct experimental access to features like band gaps as well as plasmons and/or plasmonlike resonances. In graphene, a band gap (cf. Fig. 1) is created (i) when the atomically thin material is deposited on a substrate [16,17], (ii) when strain is applied, (iii) when impurities are present, and (iv) in cases where graphene bilayers instead of a single layer are considered. Values for of the order of tens of meV have been predicted [16,17], thus triggering corresponding experimental investigations. These band gaps and the features connected with them are still the subject of discussions [18,19] so that reliable experimental means for their analysis are highly desirable.For planar geometries the decay rate of an emitter is a functional of the system's optical scattering coefficients. We model * jwerra@physik.hu-berlin.de a monoatomic graphene layer in terms of a 2+1-dimensional Dirac fluid [10,20,21] and embed it in a nondispersive and nondissipative dielectric medium with permittivity ε m . As a result, the graphene layer ...