Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film

Hung, Hsiang-Hsuan; Huang, Sheng‐Yi; Chang, P.; Lin, Wei-Hsun; Liu, Y.C.; Lee, S. F.; Hong, M.; Kwo, J.

doi:10.1016/j.jcrysgro.2010.11.075

Cited by 7 publications

(2 citation statements)

References 15 publications

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“…At investigated temperature region, the Fe0.75Si0.25 film resistance demonstrates a typical metallic behavior as expected. Besides, the resistivity value rises from 55 μOhm·cm at 4.2 K to 120 μOhm·cm at 300 K, which is comparable with other reported results [8,25]. One can easily see a knee ( Fig.…”

Section: Resultssupporting

confidence: 91%

Approach to form planar structures based on epitaxial Fe1−xSix films grown on Si(111)

et al. 2017

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An approach to form planar structures based on ferromagnetic Fe1 − xSix films is presented. Epitaxial Fe1 − xSix iron-silicon alloy films with different silicon content (x = 0-0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.

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Section: Resultssupporting

confidence: 91%

Approach to form planar structures based on epitaxial Fe1−xSix films grown on Si(111)

et al. 2017

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“…Эпи-таксиальные пленки Fe 3 Si интенсивно исследуются по-следнее десятилетие с целью создания устройств спин-троники [1][2][3][4]. Высокая спиновая поляризация силицида железа Fe 3 Si также открывает возможности для созда-ния ферромагнитных периодических структур, таких как магнитофотонные кристаллы [5].…”

Section: Introductionunclassified

Наноструктуры Ферромагнитный Металл/Полупроводник На Основе Силицидов Железа

Овчинников¹,

Варнаков²,

Лященко³

et al. 2016

Физика Твердого Тела

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Ферромагнитные монокристаллические эпитаксиальные пленки Fe 3 Si и поликристаллические пленки Fe5Si 3 получены на подложках Si методом молекулярно-лучевой эпитаксии с in situ контролем структуры, оптических и магнитных свойств. Обсуждаются результаты структурных, магнитных и оптических измерений. Экспериментальные данные сравниваются с результатами микроскопического расчета спин-поляризованной электронной структуры, спектров диэлектрической проницаемости и оптической проводимости.Работа выполнена при поддержке Российского научного фонда (грант № 16-13-00060).

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The atomic ordering dependence of magnetic and magneto-transport properties for polycrystalline Fe3Si films

Xie

Liao

et al. 2021

Journal of Magnetism and Magnetic Materials

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Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film

Cited by 7 publications

References 15 publications

Approach to form planar structures based on epitaxial Fe1−xSix films grown on Si(111)

Approach to form planar structures based on epitaxial Fe1−xSix films grown on Si(111)

Наноструктуры Ферромагнитный Металл/Полупроводник На Основе Силицидов Железа

The atomic ordering dependence of magnetic and magneto-transport properties for polycrystalline Fe3Si films

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