Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN

Copelman, Seth; Austin, Hayley; Timmerman, Dolf; Poplawsky, Jonathan D.; Waite, M. M.; Tatebayashi, J.; Ichikawa, Shuhei; Fujiwara, Yoshihiro; Dierolf, Volkmar; Mitchell, Brandon

doi:10.1117/12.2544005

Cited by 3 publications

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“…The intensity of the 5 D 0 → 7 F 3 transition is significantly noticeable with respect to 5 D 0 → 7 F 1 and 5 D 0 → 7 F 2 transitions under NIR excitation. The enhancement of the 7 F 3 transition may be possible due to strong J-mixing, crystal field perturbation, and increased population of 5 D 1 and 5 D 0 excited states via the cross-relaxation mechanism (CR1 and CR2) occurring between Yb 3+ and Eu 3+ energy levels. , …”

Section: Resultsmentioning

confidence: 99%

“…The enhancement of the 7 F 3 transition may be possible due to strong J-mixing, crystal field perturbation, and increased population of 5 D 1 and 5 D 0 excited states via the crossrelaxation mechanism (CR1 and CR2) occurring between Yb 3+ and Eu 3+ energy levels. 45,46 In the KLaF 4 : Er 3+ /Eu 3+ /Yb 3+ sample, both acceptors Er 3+ and Eu 3+ ions are sensitized by Yb 3+ ions. The green and red emissions from Er 3+ ions arise due to concurrent ETU and BET processes, while orange and red emissions from Eu 3+ ions are obtained due to the cross energy transfer (CET) phenomenon.…”

Section: The Journal Of Physical Chemistrymentioning

confidence: 99%

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Up- and Downconversion Dual-Mode Excitation Spectral Studies of Rare Earth Doped KLaF₄ Nano Emitters for Biophotonic Applications

Deo,

Gupta,

Prakash

2023

J. Phys. Chem. C

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Section: Resultsmentioning

confidence: 99%

Section: The Journal Of Physical Chemistrymentioning

confidence: 99%

Up- and Downconversion Dual-Mode Excitation Spectral Studies of Rare Earth Doped KLaF₄ Nano Emitters for Biophotonic Applications

Deo,

Gupta,

Prakash

2023

J. Phys. Chem. C

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Local strain-dependent Zeeman splitting in GaN:Eu

et al. 2022

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The electronic spins of rare-earth materials are attractive candidates for spin qubits and quantum memories. To access individual spins, tuning of the g-factor is desirable. Here, we report on local strain-dependent g-factors of the 5D0–7F2 transitions of Eu3+ centers in GaN:Eu thin films. We have found a clear correlation between the effective g-factor and the emission energy shift induced by the local strain. The combination of micro-photoluminescence and scanning electron microscope/electron backscattering diffraction measurements has revealed that the compressive strain of 0.2%–0.4%, relative to a surrounding reference point, induces an energy shift of about 3 meV. The strain decreases the g-factor of the emission at 1.991 eV from 2.5 to 1.5, while the strain increases the g-factor of the emission at 1.994 eV from 1.1 to 1.7. The result suggests that the g-factor can be tuned by the local strain. On the basis of the strain-induced energy shift and the g-factor, we have identified the optical sites. The 5D0–7F2 transitions observed in this study consist of three optical sites with C3v symmetry and one site with C1h symmetry.

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An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN

Iwaya,

Ichikawa,

Dierolf

et al. 2024

AIP Advances

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For the development of III-nitride-semiconductor-based monolithic micro-light-emitting diode (LED) displays, Eu,O-codoped GaN (GaN:Eu,O) is a promising material candidate for the red LEDs. The luminescence efficiency of Eu-related emission strongly depends on the local atomic structure of Eu ions. Our previous research has revealed that post-growth thermal annealing is an effective method for reconfiguring luminescent sites, leading to a significant increase in light output. We observed the preferential formation of a site with a peak at ∼2.004 eV by the annealing process. In this study, we demonstrate that it is a previously unidentified independent site (OMVPE-X) using combined excitation–emission spectroscopy and time-resolved photoluminescence measurements. In addition, we perform excitation power-dependent photoluminescence measurements and show that this OMVPE-X site dominates the emission at a low excitation power region despite its small relative abundance, suggesting a high excitation efficiency. Most importantly, applying our annealing technique to an LED exhibits a reasonably increased electroluminescence intensity associated with OMVPE-X, confirming that this site has a high excitation efficiency also under current injection. These results demonstrate the importance of OMVPE-X as a notable luminescent site for brighter and more efficient GaN:Eu,O-based LEDs.

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Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN

Cited by 3 publications

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Up- and Downconversion Dual-Mode Excitation Spectral Studies of Rare Earth Doped KLaF₄ Nano Emitters for Biophotonic Applications

Up- and Downconversion Dual-Mode Excitation Spectral Studies of Rare Earth Doped KLaF₄ Nano Emitters for Biophotonic Applications

Local strain-dependent Zeeman splitting in GaN:Eu

An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN

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Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN

Cited by 3 publications

References 0 publications

Up- and Downconversion Dual-Mode Excitation Spectral Studies of Rare Earth Doped KLaF4 Nano Emitters for Biophotonic Applications

Up- and Downconversion Dual-Mode Excitation Spectral Studies of Rare Earth Doped KLaF4 Nano Emitters for Biophotonic Applications

Local strain-dependent Zeeman splitting in GaN:Eu

An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN

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Up- and Downconversion Dual-Mode Excitation Spectral Studies of Rare Earth Doped KLaF₄ Nano Emitters for Biophotonic Applications

Up- and Downconversion Dual-Mode Excitation Spectral Studies of Rare Earth Doped KLaF₄ Nano Emitters for Biophotonic Applications