Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing

Shirokura, Takanori; Muneta, Iriya; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi

doi:10.1063/1.5118913

Cited by 13 publications

(11 citation statements)

References 37 publications

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“…Other prominent defect-induced peaks that arise at ∼359, ∼180, and ∼187 cm –1 are assigned to the TO(M), ZA(M), and TA(K) modes, respectively . In addition, linewidths of the first-order Raman peaks are wider than those obtained for monolayer MoS 2 exfoliated from bulk [Figure S2], thereby corroborating the presence of structural disorders in the grown film . These vacancies and disorders can be “repaired” to a great extent by annealing post growth in a S-rich environment.…”

Section: Resultsmentioning

confidence: 52%

“… 38 In addition, linewidths of the first-order Raman peaks are wider than those obtained for monolayer MoS 2 exfoliated from bulk [ Figure S2 ], thereby corroborating the presence of structural disorders in the grown film. 39 These vacancies and disorders can be “repaired” to a great extent by annealing post growth in a S-rich environment. Upon sulfurization at 850 °C under AP for 30 min (more details in the Material Synthesis section), the as-grown film transforms into isolated monolayer triangular domains, as seen in the inset of Figure 1 c. During the sulfurization process at high temperature, the carbon impurities from the organic precursors and oxide-based intermediate compounds can be desorbed from the MOCVD-grown film.…”

Section: Resultsmentioning

confidence: 99%

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Two-Step Growth of Uniform Monolayer MoS₂ Nanosheets by Metal–Organic Chemical Vapor Deposition

et al. 2021

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To achieve large area growth of transition metal dichalcogenides of uniform monolayer thickness, we demonstrate metal–organic chemical vapor deposition (MOCVD) growth under low pressure followed by a high-temperature sulfurization process under atmospheric pressure (AP). Following sulfurization, the MOCVD-grown continuous MoS 2 film transforms into compact triangular crystals of uniform monolayer thickness as confirmed from the sharp distinct photoluminescence peak at 1.8 eV. Raman and X-ray photoelectron spectroscopies confirm that the structural disorders and chalcogen vacancies inherent to the as-grown MOCVD film are substantially healed and carbon/oxygen contaminations are heavily suppressed. The as-grown MOCVD film has a Mo/S ratio of 1:1.6 and an average defect length of ∼1.56 nm, which improve to 1:1.97 and ∼21 nm, respectively, upon sulfurization. The effect of temperature and duration of the sulfurization process on the morphology and stoichiometry of the grown film is investigated in detail. Compared to the APCVD growth, this two-step growth process shows more homogenous distribution of the triangular monolayer MoS 2 domains across the entire substrate, while demonstrating comparable electrical performance.

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Section: Resultsmentioning

confidence: 52%

Section: Resultsmentioning

confidence: 99%

Two-Step Growth of Uniform Monolayer MoS₂ Nanosheets by Metal–Organic Chemical Vapor Deposition

et al. 2021

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“…Shirokura et al. [ 83 ] measured the hysteresis curves of sputtered MoS 2 deposition samples and their annealed samples in S vapor and Ar. The relationship between crystallinity and edge‐induced ferromagnetism was studied.…”

Section: Structure Regulation Strategymentioning

confidence: 99%

“…Thus, this work could provide a basis for understanding the mechanism of magnetism caused by defects or edge structures and for developing a high-quality diluted magnetic semiconductor based on 2D materials. Shirokura et al [83] measured the hysteresis curves of sputtered MoS 2 deposition samples and their annealed samples in S vapor and Ar. The relationship between crystallinity and edge-induced ferromagnetism was studied.…”

Section: Size or Edge Regulationmentioning

confidence: 99%

Emerging Enhancement and Regulation Strategies for Ferromagnetic 2D Transition Metal Dichalcogenides

Yang,

Hu,

Yang

et al. 2023

Advanced Science

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Two‐dimensional transition metal dichalcogenides (2D TMDs) present promising applications in various fields such as electronics, optoelectronics, memory devices, batteries, superconductors, and hydrogen evolution reactions due to their regulable energy band structures and unique properties. For emerging spintronics applications, materials with excellent room‐temperature ferromagnetism are required. Although most transition metal compounds do not possess room‐temperature ferromagnetism on their own, they are widely modified by researchers using the emerging strategies to engineer or modulate their intrinsic properties. This paper reviews recent enhancement approaches to induce magnetism in 2D TMDs, mainly using doping, vacancy defects, composite of heterostructures, phase modulation, and adsorption, and also by electron irradiation induction, O plasma treatment, etc. On this basis, the produced effects of these methods for the introduction of magnetism into 2D TMDs are compressively summarized and constructively discussed. For perspective, research on magnetic doping techniques for 2D TMDs materials should be directed toward more reliable and efficient directions, such as exploring advanced design strategies to combine dilute magnetic semiconductors, antiferromagnetic semiconductors, and superconductors to develop new types of heterojunctions; and advancing experimentation strategies to fabricate the designed materials and enable their functionalities with simultaneously pursuing the upscalable growth methods for high‐quality monolayers to multilayers.

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“…Except for graphene, MoS 2 [ 17 , 18 , 19 , 20 , 21 ] has also attracted extensive attention. Interestingly, many experimental studies show that the defective MoS 2 nanostructures [ 18 , 19 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 ] also exhibit FM.…”

Section: Introductionmentioning

confidence: 99%

Strain-Modulated Magnetism in MoS2

Ren

Xiang

2022

Nanomaterials

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Since the experiments found that two-dimensional (2D) materials such as single-layer MoS2 can withstand up to 20% strain, strain-modulated magnetism has gradually become an emerging research field. However, applying strain alone is difficult to modulate the magnetism of single-layer pristine MoS2, but applying strain combined with other tuning techniques such as introducing defects makes it easier to produce and alter the magnetism in MoS2. Here, we summarize the recent progress of strain-dependent magnetism in MoS2. First, we review the progress in theoretical study. Then, we compare the experimental methods of applying strain and their effects on magnetism. Specifically, we emphasize the roles played by web buckles, which induce biaxial tensile strain conveniently. Despite some progress, the study of strain-dependent MoS2 magnetism is still in its infancy, and a few potential directions for future research are discussed at the end. Overall, a broad and in-depth understanding of strain-tunable magnetism is very necessary, which will further drive the development of spintronics, straintronics, and flexible electronics.

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Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing

Cited by 13 publications

References 37 publications

Two-Step Growth of Uniform Monolayer MoS₂ Nanosheets by Metal–Organic Chemical Vapor Deposition

Two-Step Growth of Uniform Monolayer MoS₂ Nanosheets by Metal–Organic Chemical Vapor Deposition

Emerging Enhancement and Regulation Strategies for Ferromagnetic 2D Transition Metal Dichalcogenides

Strain-Modulated Magnetism in MoS2

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Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing

Cited by 13 publications

References 37 publications

Two-Step Growth of Uniform Monolayer MoS2 Nanosheets by Metal–Organic Chemical Vapor Deposition

Two-Step Growth of Uniform Monolayer MoS2 Nanosheets by Metal–Organic Chemical Vapor Deposition

Emerging Enhancement and Regulation Strategies for Ferromagnetic 2D Transition Metal Dichalcogenides

Strain-Modulated Magnetism in MoS2

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Product

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Two-Step Growth of Uniform Monolayer MoS₂ Nanosheets by Metal–Organic Chemical Vapor Deposition

Two-Step Growth of Uniform Monolayer MoS₂ Nanosheets by Metal–Organic Chemical Vapor Deposition