Strong Electric Monopulses in Nonuniformly Doped Nitride Films under Negative Differential Conductivity

Grimalsky, V.; Koshevaya, S.; Escobedo-A, J.; Sanchez-S., J.

doi:10.1109/miel.2019.8889646

Cited by 1 publication

(5 citation statements)

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“…Note that the critical field of NDC in n-GaN is Ec = 1.2510 5 V/cm, in n-InN it is Ec = 0.4910 5 V/cm. In all cases the bias electric field corresponds to relatively small values of NDC, as it is necessary for the excitation of strong electric monopulses in the nonlinear regime [1,18,19]. When the bias field exceeds the value E00 > 1.410 5 V/cm in n-GaN and E00 > 0.5410 5 V/cm in n-InN, the linear increments of amplification increase sharply and under the nonlinear regime the stable monopulses are not excited there [18].…”

Section: Linear Amplification Of Scwmentioning

confidence: 99%

“…The dependencies of the relaxation frequencies were computed from Eqs. (1) in the stationary case /t = 0 [1,[15][16][17][18][19]; the dependencies in Fig. 2, a), b), were used.. Their computed values are p 2•10 13 s -1 for both nitrides; w  10 12 s -1 for InN, w  10 13 s -1 for GaN [15].…”

Section: Basic Equationsmentioning

confidence: 99%

“…1. Because the frequency range of amplification of SCW in the nitride films is wide and covers the lower part of THz range, it is of interest to investigate the excitation of strong nonlinear monopulses of picosecond durations without internal carrier frequency [1,18,19]. These monopulses occupy the wide frequency range f >100 GHz.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore the strong monopulses in semiconductor films with NDC differ from the ordinary domains in the bulk semiconductors [20]. Under the excitation of the domains the electric field out of them is essentially below the threshold value, whereas in the films the electric field out of the monopulses practically does not change and is equal to the bias one [1,18,19]. Moreover, only a single domain can propagate simultaneously within the crystal, and the next domain is excited when the previous one leaves the crystal.…”

Section: Introductionmentioning

confidence: 99%

“…The strong monopulses can be excited when the bias electric field slightly exceeds the critical value of the electric field for NDC and the doping levels are moderate [1,18,19]. Note that the domain regime of operation is not preferable in the bulk Gunn diodes, because of its lower efficiency compared with another regimes, like the limitation of accumulation of space charge one [20].…”

Section: Introductionmentioning

confidence: 99%

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Generation of sequences of strong electric monopulses in nitride films

et al. 2021

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This paper presents theoretical investigation of the excitation of the sequences of strong nonlinear monopulses of space charge waves from input small envelope pulses with microwave carrier frequencies due to the negative differential conductivity in n-GaN and n-InN films. The stable numerical algorithms have been used for nonlinear 3D simulations. The sequences of the monopulses of the strong electric field of 3 - 10 ps durations each can be excited. The bias electric field should be chosen slightly higher than the threshold values for observing the negative differential conductivity. The doping levels should be moderate 1016 -1017 cm-3in the films of ? 2 mm thicknesses. The input microwave carrier frequencies of the exciting pulses of small amplitudes are up to 30 GHz in n-GaN films, whereas in n-InN films they are lower, up to 20 GHz. The sequences of the electric monopulses of high peak values are excited both in the uniform nitride films and in films with non-uniform conductivity. These nonlinear monopulses in the films differ from the domains of strong electric fields in the bulk semiconductors. In the films with non-uniform doping the nonlinear pulses are excited due to the inhomogeneity of the electric field near the input end of the film and the output nonlinear pulses are rather domains.

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Section: Linear Amplification Of Scwmentioning

confidence: 99%